Methods of directed self-assembly with 193 - nm immersion lithography and layered structures formed therefrom

    公开(公告)号:GB2488250A

    公开(公告)日:2012-08-22

    申请号:GB201203583

    申请日:2010-11-26

    Applicant: IBM

    Abstract: A method of forming a layered structure comprising a domain pattern of a self-assembled material comprises: disposing on a substrate a photoresist layer comprising a non-crosslinking photoresist; optionally baking the photoresist layer; pattern- wise exposing the photoresist layer to first radiation; optionally baking the exposed photoresist layer; and developing the exposed photoresist layer with a non-alkaline developer to form a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist; wherein the developed photoresist is not soluble in a given organic solvent suitable for casting a given material capable of self-assembly, and the developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the given material capable of self-assembly dissolved in the given organic solvent is casted on the patterned photoresist layer, and the given organic solvent is removed. The casted given material is allowed to self-assemble while optionally heating and/or annealing the casted given material, thereby forming the layered structure comprising the domain pattern of the self-assembled given material.

    22.
    发明专利
    未知

    公开(公告)号:DE69324439T2

    公开(公告)日:1999-11-25

    申请号:DE69324439

    申请日:1993-10-29

    Applicant: IBM

    Abstract: A lithographic imaging process is provided for use in the manufacture of integrated circuits. A substrate is coated with a polymeric film comprising a vinyl polymer, a photosensitive acid generator, and acid labile groups. It is then heated to typically just above the glass transition temperature of the polymer, but below the cleavage temperature of the acid labile groups. The film is then expose imagewise to radiation to generate free acid, and the film is once more heated, again to typically just above the glass transition temperature of the polymer, but below the cleavage temperature of the acid labile groups. Finally the image is developed. The process provides protection to the photoresist film from airborne chemical contaminants.

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