公开(公告)号：DE102004021227A1

公开(公告)日：2005-11-17

申请号：DE102004021227

申请日：2004-04-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KLAUK HAGEN ,  HALIK MARCUS ,  ZSCHIESCHANG UTE ,  SCHMID GUENTER ,  DEHM CHRISTINE

IPC: G11C13/02 ,  G11C17/16 ,  H01L21/02 ,  H01L27/112 ,  H01L27/24 ,  H01L27/28 ,  H01L51/00 ,  H01L51/20

Abstract: Uniquely recordable semiconductor memory comprises a fuse (a self-organized monologue of an organic compound) for preventing stored information that are deleted or changed.

公开(公告)号：DE10053171C2

公开(公告)日：2003-02-06

申请号：DE10053171

申请日：2000-10-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SITARAM ARKALGUD ,  DEHM CHRISTINE

IPC: H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8239

Abstract: A method is described in which a metal oxide-containing layer is applied to a substrate and is then exposed to implantation with oxygen ions. A subsequent heat-treatment step can be carried out in an inert atmosphere and with shorter process times, since the oxygen is already present in the metal oxide-containing layer and, moreover, shorter diffusion paths are required for the oxygen to become intercalated in the crystal lattice of the metal oxide-containing layer. Therefore, adjacent layers, such as barrier layers, are less affected by the heat treatment.

公开(公告)号：DE10000005C1

公开(公告)日：2001-09-13

申请号：DE10000005

申请日：2000-01-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KASTNER MARCUS ,  SCHINDLER GUENTHER ,  HARTNER WALTER ,  DEHM CHRISTINE

IPC: H01L21/316 ,  H01L21/02 ,  H01L21/318 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L21/8239

Abstract: A switching transistor (2) is formed on a semiconductor substrate (1). An insulating layer (4) is applied, with a first layer (5) preventing hydrogen ingress. A memory condenser coupled with the transistor is added. It includes a lower (7) and upper electrode (9), with intervening metal oxide-containing layer (8). In a vertical etching stage, the insulation layer outside the storage condenser is removed to a set depth, laying bare the first barrier layer. On the storage condenser, insulating layer and first barrier layer, a second barrier layer (10) is applied, especially blocking hydrogen ingress. Preferred etching methods and materials employed are claimed.

公开(公告)号：DE10057806B4

公开(公告)日：2007-10-11

申请号：DE10057806

申请日：2000-11-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ROEHR THOMAS ,  HOENIGSCHMID HEINZ ,  DEHM CHRISTINE

IPC: H01L21/8239 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11502 ,  H01L27/11507

Abstract: An integrated ferroelectric memory configuration and a method for producing the integrated ferroelectric memory configuration, in which memory cells are arranged using the stacking principle, and both capacitor electrodes, which are located one above the other, of each memory cell are directly electrically connected by means of contact plugs to corresponding source and drain regions of an associated selection transistor in the substrate. Contact plugs for the contact connection to the upper capacitor electrodes are produced from above the configuration.

公开(公告)号：DE50109137D1

公开(公告)日：2006-05-04

申请号：DE50109137

申请日：2001-09-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SITARAM ARKALGUD ,  DEHM CHRISTINE ,  MAZURE-ESPEJO CARLOS

IPC: H01L21/28 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/115 ,  H01L27/11507

公开(公告)号：DE19935131B4

公开(公告)日：2006-01-26

申请号：DE19935131

申请日：1999-07-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BERGMANN RENATE ,  DEHM CHRISTINE ,  HASLER BARBARA ,  SCHELER ULRICH ,  SCHINDLER GUENTHER ,  WEINRICH VOLKER ,  HARTNER WALTER

IPC: H01L21/02 ,  H01L21/302 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8239 ,  H01L27/08

公开(公告)号：DE102004026110A1

公开(公告)日：2005-12-22

申请号：DE102004026110

申请日：2004-05-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KLAUK HAGEN ,  HALIK MARCUS ,  ZSCHIESCHANG UTE ,  SCHMID GUENTER ,  DEHM CHRISTINE

IPC: G11C11/56 ,  G11C13/02 ,  H01L27/24 ,  H01L27/28 ,  H01L51/00

Abstract: Semiconductor memory comprises an arrangement having storage material (16) formed as a number of molecules arranged between a first lower electrode (14) and a second upper electrode (18). The molecules have different chemical-physical states with different information states. The lower and/or upper electrodes are formed completely or partially from gallium arsenide. The molecules are formed as a number of mono layers.

公开(公告)号：DE102004005248A1

公开(公告)日：2005-09-15

申请号：DE102004005248

申请日：2004-01-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEHM CHRISTINE ,  HALIK MARCUS ,  KLAUK HAGEN ,  ZSCHIESCHANG UTE ,  SCHMID GUENTER ,  SYMANCZYK RALF

IPC: A61B5/01 ,  G01K7/01 ,  H01L51/20

Abstract: The device has an organic field effect transistor (10) that is formed by arranging an organic semiconductor layer (24) over source, drain and gate dielectric layers and a gate electrode. The transistor is utilized to collect a temperature dependant electrical parameter, where drain-source-voltage of the transistor is used as a measured temperature value. A threshold voltage of the transistor is dependent on temperature over a wide area. An independent claim is also included for use of a temperature sensor device in a measuring device for measuring body temperature of a living being e.g. human being.

公开(公告)号：DE10355561A1

公开(公告)日：2005-06-30

申请号：DE10355561

申请日：2003-11-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SEZI RECAI ,  WALTER ANDREAS ,  ENGL REIMUND ,  MALTENBERGER ANNA ,  DEHM CHRISTINE ,  ARKALGUD SITARAM ,  KASKO IGOR ,  NUETZEL JOACHIM ,  KRIZ JAKOB ,  MIKOLAJICK THOMAS ,  PINNOW CARL-UWE

IPC: C09D5/24 ,  C09D5/25 ,  G11C13/02 ,  H01L27/24 ,  H01L27/28 ,  H01L51/00 ,  H01L51/30