中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

55 records (took 0.032 seconds)

    21.
    发明专利
    未知

    公开(公告)号：DE102007012115A1

    公开(公告)日：2008-06-05

    申请号：DE102007012115

    申请日：2007-03-13

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： JAEGER ARNDT ,  STREUBEL KLAUS ,  STAUS PETER ,  KUHLMANN WERNER

    IPC: G01J1/42 ,  G01J3/46 ,  H01L31/02

    Abstract: A radiation detector is disclosed with a detector arrangement, which has a plurality of detector elements, by means of which a detector signal is obtained during operation of the radiation detector, and with a control device, wherein the detector elements each have a spectral sensitivity distribution, and are suited for generating signals, at least one detector element comprises a compound semiconductor material, and this detector element is designed for detecting radiation in the visible spectral region, the radiation detector is designed such that the sensitivity distributions of the detector elements are used to form different spectral sensitivity channels of the radiation detector, a channel signal assigned to the respective sensitivity channel can be generated in these sensitivity channels using the detector elements, and the control device is designed such that the contributions of different channel signals to the detector signal of the radiation detector are differently controlled.

    30.
    发明专利
    未知

    公开(公告)号：DE102005056950A1

    公开(公告)日：2007-04-05

    申请号：DE102005056950

    申请日：2005-11-29

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： STREUBEL KLAUS ,  LINDER NOBERT ,  GROENNINGER GUENTHER ,  KUGLER SIEGMAR ,  HEIDBORN PETER

    IPC: H01L31/0304 ,  H01L31/0352 ,  H01L31/109 ,  H01L33/02 ,  H01L33/04 ,  H01L33/30 ,  H01S5/02 ,  H01S5/30

    Abstract: The gallium-arsenic semiconductor substrate (1) for production of electronic/optoelectronic semiconductor component (27), comprises sequence of semiconductor layers (2) that is applied on the substrate. The sequence of semiconductor layers are Al 1 - yGa yAs 1 - xP x with 0 =x=1 and 0 =y=1. The semiconductor layers exhibit a phosphorus content (x) that is larger than the underlying-, adjacent semiconductor layer in the growth direction of the sequence of semiconductor layers. The total thickness of the sequence of semiconductor layers is 10 mu m or less. The gallium-arsenic semiconductor substrate (1) for the production of electronic/optoelectronic semiconductor component (27), comprises sequence of semiconductor layers (2) applied on the substrate. The sequence of semiconductor layers are Al 1-yGa yAs 1-xP x with 0 =x=1 and 0 =y=1. The semiconductor layers exhibit a phosphorus content (x) that is larger than the underlying-, adjacent semiconductor layer in the growth direction of the sequence of semiconductor layers. The total thickness of the sequence of semiconductor layers is 10 mu m or less. The phosphorus content (x) rises gradually in three sequentially superimposed semiconductor layers of the sequence of semiconductor layers. The sequence of semiconductor layers contains a superlattice structure with alternating first semiconductor layers and second semiconductor layers. The first semiconductor layers contain a phosphorus content x 1>=0 and the second semiconductor layers contain a phosphorus content of x 2>=0 with x 1 not equal to x 2. The semiconductor layers exhibit a thickness between 100-1000 nm. The uppermost semiconductor layer (7) of the sequence of semiconductor layers exhibits a smaller lattice constant than its two preceding semiconductor layers and is relaxed. An independent claim is included for a semiconductor element.

Patent Agency Ranking