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公开(公告)号：KR1020170086454A
公开(公告)日：2017-07-26
申请号：KR1020170091891
申请日：2017-07-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H05H1/46 , H01L21/3065 , H01L21/205 , H01L21/302
CPC classification number: H05H1/46 , H01L21/205 , H01L21/302 , H01L21/3065
Abstract: (과제) 플라즈마에의한금속창의스패터절삭을억제함과아울러플라즈마의강도의분포조정을가능으로하는유도결합형의플라즈마처리장치를제공한다. (해결수단) 기판 G를플라즈마처리하는플라즈마처리장치(100)는, 플라즈마생성영역에유도결합플라즈마를발생시키는고주파안테나(11)와, 플라즈마생성영역과고주파안테나(11)의사이에배치되고, 본체용기와절연된금속창(3)을구비한다. 금속창(3)은, 절연체에의해서로절연된복수의금속창(30a∼30d)을갖고, 이러한금속창(30a∼30d)을각각 1점의접지점에서그라운드접속한다.
Abstract translation: 本发明公开了一种电感耦合等离子体处理装置，其能够抑制等离子体对金属窗的溅射并且调节等离子体强度的分布。 等离子体处理基板（G）的等离子体处理装置（100）包括用于在等离子体生成区域中生成感应耦合等离子体的高频天线（11），以及高频天线 还有一个容器和一个绝缘金属窗（3）。 金属窗3具有多个由绝缘体绝缘的金属窗30a至30d，金属窗30a至30d在地面的一点接地。
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公开(公告)号：KR101758026B1
公开(公告)日：2017-07-14
申请号：KR1020160144583
申请日：2016-11-01
Applicant: 도쿄엘렉트론가부시키가이샤
Abstract: 유도결합형의플라즈마프로세스에있어서간이한보정코일을이용하여플라즈마밀도분포를자유롭고또한정밀하게제어하는것이다. 이유도결합형플라즈마처리장치는 RF 안테나(54)에근접하는유전체창(52)의아래에서유도결합의플라즈마를도넛형상으로생성하고, 이도넛형상의플라즈마를넓은처리공간내에서분산시켜, 서셉터(12) 근방(즉, 반도체웨이퍼 W상)에서플라즈마의밀도를평균화하도록하고있다. 그리고, 서셉터(12) 근방의플라즈마밀도분포를직경방향에서균일화하고, 또한 RF 안테나(54)가발생하는 RF 자계에대해보정링(70)에의해전자계적인보정을거는동시에, 프로세스조건에따라스위칭기구(110)에의해보정코일(70)의통전듀티비를가변하도록하고있다.
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公开(公告)号：KR101718182B1
公开(公告)日：2017-03-20
申请号：KR1020130067634
申请日：2013-06-13
Applicant: 도쿄엘렉트론가부시키가이샤
Abstract: 장치의구성을간소화할수 있음과아울러, 플라즈마의생성효율의저하를방지할수 있는플라즈마처리장치를제공한다. 플라즈마처리장치(10)는, 챔버(11)와, 해당챔버(11)의내부에배치되고기판 S를탑재하는탑재대(12)와, 챔버(11)의외부에서탑재대(12)와대향하도록배치되고고주파전원(26)에접속되는 ICP 안테나(13)와, ICP 안테나(13)와대향하는챔버(11)의벽부를구성하고, 탑재대(12) 및 ICP 안테나(13)의사이에개재되는, 도전체로이루어지는창 부재(14)와, 창부재(14)에양단이접속되는도선(28)을구비하며, 창부재(14) 및도선(28)은폐회로를형성하고, 도선(28)은콘덴서(29)를가진다.
Abstract translation: 提供一种能够简化装置结构并防止等离子体产生效率降低的等离子体处理装置。 等离子体处理装置10包括腔室11，配置在腔室11内用于载置基板S的载置台12， 以及连接到RF电源26和腔室11的面向ICP天线13的壁部分的ICP天线13.ICT天线13连接到ICP天线13， 窗部件14由导电材料制成，导线28连接到窗部件14的两端。窗部件14和导线28形成隐藏电路， 它有一个29。
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公开(公告)号：KR101672078B1
公开(公告)日：2016-11-02
申请号：KR1020130153691
申请日：2013-12-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/687 , C23C16/458 , C23C16/455 , H01J37/32 , H01L21/02
CPC classification number: H01J37/321 , C23C16/45536 , C23C16/45551 , C23C16/4584 , H01J37/32082 , H01J37/3211 , H01J37/3244 , H01J37/32651 , H01J37/32715 , H01J37/32733 , H01J37/32752 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02214 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/68764 , H01L21/68771
Abstract: 진공용기내에서기판에대해성막처리를행하도록구성된성막장치는, 상기기판을적재하도록구성된기판적재영역을공전시키도록구성된회전테이블과, 상기기판적재영역에처리가스를공급하도록구성된처리가스공급부를포함하고, 상기회전테이블의회전에수반하여상기기판상에분자층혹은원자층을순차적층하여박막을형성하도록구성된성막영역과, 상기성막영역에대해상기회전테이블의회전방향으로이격되어형성된플라즈마발생영역에서, 플라즈마발생용가스의플라즈마화에의해생성된플라즈마에의해상기분자층혹은원자층을개질처리하도록구성된플라즈마처리부와, 플라즈마중의이온을상기기판의표면에인입시키기위해, 상기회전테이블상의상기기판의높이보다도하방측에설치된하측바이어스전극및 상기높이와동일하거나혹은당해높이보다도상방측에배치된상측바이어스전극과, 상기하측바이어스전극및 상기상측바이어스전극중 적어도한쪽에접속되고, 상기하측바이어스전극및 상기상측바이어스전극이상기플라즈마발생영역을사이에두고용량결합되어상기기판에바이어스전위를형성하도록구성된고주파전원부와, 상기진공용기내를배기하도록구성된배기기구를구비한다.
Abstract translation: 用于对基板进行成膜处理的成膜装置包括旋转台，成膜区域，被配置为包括处理气体供给部，等离子体处理部，设置在位置的下侧的下偏置电极 位于旋转台上的基板的高度，布置在高度位置的相同位置的上偏置电极或高度位置的上侧;高频电源部分，连接到下偏置电极和下偏置电极中的至少一个; 所述上偏置电极并且被配置为以所述下偏置电极和所述上偏置电极电容耦合的方式在所述衬底上形成偏置电位，以及排气机构。
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公开(公告)号：KR1020150005450A
公开(公告)日：2015-01-14
申请号：KR1020140078688
申请日：2014-06-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H05H1/46 , H01L21/3065 , H01L21/205
CPC classification number: H05H1/46 , H01L21/205 , H01L21/302 , H01L21/3065
Abstract: (과제) 플라즈마에 의한 금속창의 스패터 절삭을 억제함과 아울러 플라즈마의 강도의 분포 조정을 가능으로 하는 유도 결합형의 플라즈마 처리 장치를 제공한다.
(해결 수단) 기판 G를 플라즈마 처리하는 플라즈마 처리 장치(100)는, 플라즈마 생성 영역에 유도 결합 플라즈마를 발생시키는 고주파 안테나(11)와, 플라즈마 생성 영역과 고주파 안테나(11)의 사이에 배치되고, 본체 용기와 절연된 금속창(3)을 구비한다. 금속창(3)은, 절연체에 의해 서로 절연된 복수의 금속창(30a∼30d)을 갖고, 이러한 금속창(30a∼30d)을 각각 1점의 접지점에서 그라운드 접속한다.Abstract translation: 提供一种电感耦合等离子体处理装置，其不仅能够通过等离子体抑制金属窗的飞溅切割，还能够调整等离子体强度的分布。 执行基板G的等离子体处理的等离子体处理装置（100）包括：在等离子体产生区域中产生感应耦合等离子体的高频天线（11） 以及设置在等离子体产生区域和高频天线（11）之间并与主体容器绝缘的金属窗（3）。 金属窗（3）具有由绝缘体相互绝缘的多个金属窗（30a-30d），并使金属窗（30a-30d）分别在每个接地点处接地。
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Patent Agency Ranking
公开(公告)号：KR1020140100890A
公开(公告)日：2014-08-18
申请号：KR1020140008201
申请日：2014-01-23
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H05H1/46 , H01L21/3065
CPC classification number: H05H1/46 , C23C16/505 , H01L21/3065
Abstract: Provided is an inductive coupling plasma processing apparatus capable of performing an even plasma treatment by using a metal window for a large target substrate. The inductive coupling plasma processing apparatus, performs an inductive coupling plasma treatment on a substrate of a rectangular shape, includes a processing chamber which accommodates the substrate; a high frequency antenna for generating inductive coupling plasma in the processing chamber; and a metal window which is arranged between the high frequency antenna and a plasma generating area where the inductive coupling plasma is generated and is arranged to correspond to the substrate. The metal window (2) is divided into multiple areas by a slit (7) and has a long side area (202b) corresponding to a long side (2b) and a short side area (202a) corresponding to a short side (2a). The outer slit (71) of the slit (7) has a short part (71a) corresponding to the short side area (202a) and a long part (71b) corresponding to the long side area (202b), wherein the short part (71a) has a width which is greater than that of the long side part (71b).
Abstract translation: 提供一种感应耦合等离子体处理装置，其能够通过使用用于大目标基板的金属窗进行均匀等离子体处理。 电感耦合等离子体处理装置对矩形形状的基板进行电感耦合等离子体处理，包括容纳基板的处理室; 用于在所述处理室中产生感应耦合等离子体的高频天线; 以及金属窗，其布置在高频天线和产生感应耦合等离子体的等离子体产生区域之间并且被布置为对应于衬底。 金属窗（2）通过狭缝（7）分成多个区域，并具有对应于长边（2b）的长边区域（202b）和对应于短边（2a）的短边区域（202a） 。 狭缝（7）的外侧狭缝（71）具有与短边区域（202a）对应的短路部分（71a）和与长边区域（202b）对应的长边部分（71b），短边部分 71a）的宽度大于长边部（71b）的宽度。
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公开(公告)号：KR1020140077841A
公开(公告)日：2014-06-24
申请号：KR1020130153691
申请日：2013-12-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/687 , C23C16/458 , C23C16/455 , H01J37/32 , H01L21/02
CPC classification number: H01J37/321 , C23C16/45536 , C23C16/45551 , C23C16/4584 , H01J37/32082 , H01J37/3211 , H01J37/3244 , H01J37/32651 , H01J37/32715 , H01J37/32733 , H01J37/32752 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02214 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/68764 , H01L21/68771
Abstract: A film formation apparatus, which is configured to conduct a film formation process for a substrate in a vacuum chamber, includes a rotating table configured to revolve a substrate loading area configured to load a substrate thereon; a film formation area configured to include a process gas supply part configured to supply a process gas to the substrate mounting area and sequentially laminate a molecular layer or an atomic layer on the substrate with rotation of the rotating table to form a thin film; a plasma processing part configured to conduct modification processing on the molecular layer or the atomic layer by plasma produced through plasma formation of a gas for plasma generation in a plasma generation area formed separately from the film formation area in a direction of rotation of the rotating table; a lower bias electrode provided at a lower side of the height position of the substrate on the rotating table to attract ions in the plasma to a surface of the substrate; an upper bias electrode arranged at the same height position or an upper side of the height position of the substrate; a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled through the plasma generation area; and an exhaust device configured to evacuate inside of the vacuum chamber.
Abstract translation: 构造成在真空室中进行基板的成膜处理的成膜装置包括旋转台，被配置为旋转被配置为在其上装载基板的基板装载区域; 成膜区域，其被配置为包括处理气体供给部，其被配置为向所述基板安装区域提供处理气体，并且通过所述旋转台的旋转顺序地将所述基板上的分子层或原子层层叠以形成薄膜; 等离子体处理部，其被配置为通过等离子体形成等离子体形成等离子体生成等离子体生成等离子体生成区域，使其在分子层或原子层上进行改性处理，所述等离子体产生区域与所述成膜区域分开地形成在所述旋转台的旋转方向上 ; 下偏置电极，设置在旋转台上的基板的高度位置的下侧，以将等离子体中的离子吸引到基板的表面; 布置在所述基板的高度位置的相同高度位置或上侧的上偏置电极; 连接到所述下偏置电极和所述上偏置电极中的至少一个的高频电源部，并且被配置为以所述下偏置电极和所述上偏置电极电容耦合的方式在所述基板上形成偏置电位 通过等离子体发生区域; 以及构造成在真空室内抽真空的排气装置。
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公开(公告)号：KR1020130140571A
公开(公告)日：2013-12-24
申请号：KR1020130067634
申请日：2013-06-13
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: H01J37/321 , H01J37/3211 , H01J37/32119 , H01J37/32192 , H05H1/46
Abstract: A plasma treatment apparatus is provided, which is capable of simplifying the configuration thereof and preventing the deterioration of plasma generation efficiency. The plasma treatment apparatus (10) comprises: a chamber (11); a mount (12) arranged inside the chamber (11) to mount a substrate (S); an ICP antenna (13) arranged to be opposite to the mount (12) outside the chamber (11) and connected to a high-frequency power source (26); a window member (14) forming a wall portion of the chamber (11) facing the ICP antenna (13), interposed between the mount (12) and the ICP antenna (13) and made up of a conductor; a wire (28) having both ends connected to the window member (14), wherein the window member (14) and the wire (28) form a closed circuit and the wire (28) has a condenser (29).
Abstract translation: 提供了一种等离子体处理装置，其能够简化其构造并且防止等离子体产生效率的劣化。 等离子体处理装置（10）包括：腔室（11）; 布置在所述腔室（11）内部以安装衬底（S）的安装件（12）; ICP天线（13），布置成与腔室（11）外部的安装件（12）相对并连接到高频电源（26）; 窗口构件（14），形成面对ICP天线（13）的室（11）的壁部，插入在安装件（12）和ICP天线（13）之间并由导体构成; 具有连接到窗构件（14）的两端的线（28），其中窗构件（14）和线（28）形成闭合回路，并且线（28）具有冷凝器（29）。
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公开(公告)号：KR101250717B1
公开(公告)日：2013-04-03
申请号：KR1020117031569
申请日：2005-06-21
Applicant: 도쿄엘렉트론가부시키가이샤
Inventor： 고시이시아키라 , 스기모토마사루 , 히나타구니히코 , 고바야시노리유키 , 고시미즈치시오 , 오타니류지 , 기비가즈오 , 사이토마사시 , 마츠모토나오키 , 오오야요시노부 , 이와타마나부 , 야노다이스케 , 야마자와요헤이 , 하나오카히데토시 , 하야미도시히로 , 야마자키히로키 , 사토마나부
IPC: H01L21/3065
CPC classification number: H01L21/31116 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J2237/3342 , H01L21/31138
Abstract: 본 발명에 따르면, 상부 전극(34) 및 하부 전극(16) 사이에 처리 가스인 플라즈마를 생성하여 웨이퍼(W)에 플라즈마 에칭을 실시하는 플라즈마 에칭 장치로서, 상부 전극(34)에, 그 표면에 대한 적절한 스퍼터 효과를 얻을 수 있는 정도로 그 표면의 자기 바이어스 전압 V
dc 의 절대값이 커지고, 또한 상부 전극(34)에 있어서의 플라즈마 시스의 두께가, 소망하는 축소화 플라즈마가 형성되는 정도로 두껍게 되도록 하는 직류 전압을 인가하는 가변 직류 전원(50)을 더 구비한다.-
公开(公告)号：KR1020120100835A
公开(公告)日：2012-09-12
申请号：KR1020120022342
申请日：2012-03-05
Applicant: 도쿄엘렉트론가부시키가이샤
Inventor： 야마자와요헤이
IPC: H05H1/46 , H01L21/3065 , H01L21/205
CPC classification number: H05H1/46 , H05H2001/4667 , H05H2001/4682
Abstract: PURPOSE: A plasma processing apparatus and method are provided to precisely control plasma density distribution in doughnut shaped phase plasma which is generated by inductive coupling and the plasma density distribution on the substrate. CONSTITUTION: An RF antenna installed on a dielectric window(52) is divided into an inner coil(58), a middle coil(60), and an external coil(62) in a diameter direction. The inner coil is located in the center of a chamber in the diameter direction. A RF inlet end portion of the inner coil is connected to an RF feeding line(68) of a high frequency feeding unit(66) by interposing a connection conductor(92) and a first node. An RF output end portion of the inner coil is connected to an earth line(70). The RF inlet end portion of the middle coil contacts the RF feeding line of the high frequency feeding unit and the RF inlet end portion of the inner coil. The external coil is located on a sidewall of the chamber outward the middle coil.
Abstract translation: 目的：提供一种等离子体处理装置和方法，以精确控制通过电感耦合产生的环形相等离子体中的等离子体密度分布和基板上的等离子体密度分布。 构成：安装在电介质窗口（52）上的RF天线在直径方向分为内线圈（58），中线圈（60）和外线圈（62）。 内部线圈位于直径方向上的腔室的中心。 内部线圈的RF入口端部通过插入连接导体（92）和第一节点而连接到高频馈送单元（66）的RF馈线（68）。 内部线圈的RF输出端部连接到地线（70）。 中间线圈的RF入口端部接触高频馈送单元的RF馈线和内线圈的RF入口端部。 外部线圈位于中间线圈外侧的侧壁上。
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