中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

13 records (took 0.021 seconds)

    3.
    发明专利
    未知

    公开(公告)号：DE60128975T2

    公开(公告)日：2008-02-28

    申请号：DE60128975

    申请日：2001-01-18

    Applicant: ASML NETHERLANDS BV

    Inventor： MULKENS JOHANNES

    IPC: H01L21/027 ,  G02B19/00 ,  G03F7/20

    Abstract: A microlithography projection apparatus comprises an illuminator, for supplying a beam of radiation for illuminating a pattern on a mask, and a projection system for forming an image of the illuminated portion of the mask on a resist-coated substrate. The image is projected off-axis with respect to the optical axis of the projection system and the aperture of the illuminator is minimized to that of the illuminated portion of the mask. The illuminator is provided with a compensator, such as a tiltable mirror or wedge-like transmissive optical element for compensating for telecentricity errors intrinsic to the projection system.

    4.
    发明专利
    未知

    公开(公告)号：DE60036185D1

    公开(公告)日：2007-10-11

    申请号：DE60036185

    申请日：2000-11-16

    Applicant: ASML NETHERLANDS BV

    Inventor： MULKENS JOHANNES

    IPC: G02B5/28 ,  G03F7/20 ,  H01L21/027

    Abstract: The filter comprises alternating layers of relatively high and relatively low refractive index media. The layers are formed as a coating on an optical component in the projection lens system of a lithographic projection apparatus. The filter transmits radiation at a wavelength of 157 nm for exposing an image of a mask pattern on a resist-coated substrate whilst attenuating radiation resulting from fluorescence in optical components of the lithographic projection apparatus, caused by the imaging radiation, and which if not attenuated would reduce the contrast of the image exposed in the resist.

    5.
    发明专利
    未知

    公开(公告)号：DE60128975D1

    公开(公告)日：2007-08-02

    申请号：DE60128975

    申请日：2001-01-18

    Applicant: ASML NETHERLANDS BV

    Inventor： MULKENS JOHANNES

    IPC: G02B19/00 ,  H01L21/027 ,  G03F7/20

    Abstract: A microlithography projection apparatus comprises an illuminator, for supplying a beam of radiation for illuminating a pattern on a mask, and a projection system for forming an image of the illuminated portion of the mask on a resist-coated substrate. The image is projected off-axis with respect to the optical axis of the projection system and the aperture of the illuminator is minimized to that of the illuminated portion of the mask. The illuminator is provided with a compensator, such as a tiltable mirror or wedge-like transmissive optical element for compensating for telecentricity errors intrinsic to the projection system.

    LITHOGRAPHY CLUSTER, METHOD AND CONTROL UNIT FOR AUTOMATIC REWORK OF EXPOSED SUBSTRATES.
    7.
    发明专利
    LITHOGRAPHY CLUSTER, METHOD AND CONTROL UNIT FOR AUTOMATIC REWORK OF EXPOSED SUBSTRATES. 未知

    公开(公告)号：NL2012432A

    公开(公告)日：2014-11-03

    申请号：NL2012432

    申请日：2014-03-14

    Applicant: ASML NETHERLANDS BV

    Inventor： MULKENS JOHANNES

    IPC: G03F7/20

    Abstract: A lithography cluster comprises a track unit, a lithography apparatus, a metrology unit, a control unit and a strip unit. The track unit is for applying a layer on a substrate for lithographic exposure. The lithography apparatus is for exposing the layer according to a pattern. The metrology unit is for measuring a property of the exposed pattern in the layer. The control unit is for controlling an automatic substrate flow between the track unit, the lithography apparatus, and the metrology unit. The strip unit is for removing the layer from the substrate. The control unit is constructed and arranged for controlling the automatic substrate flow on the basis of the measured property such that the substrate is directed to the strip unit for removing the layer if a measured property of its pattern falls outside a pre-determined quality range.

Patent Agency Ranking