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公开(公告)号：US20240351865A1
公开(公告)日：2024-10-24
申请号：US18622059
申请日：2024-03-29
Applicant: Xintec Inc.
Inventor： Jiun-Yen LAI , Wei-Luen SUEN , Ming-Chung CHUNG , Chih-Wei LIU
IPC: B81C1/00
CPC classification number: B81C1/00825 , B81C2201/013 , B81C2201/0143 , B81C2201/0146 , B81C2201/0159
Abstract: A manufacturing method of a micro electro mechanical system (MEMS) device includes forming a buffer protection layer on a semiconductor structure, wherein the semiconductor structure includes a wafer, a MEMS membrane, and an isolation layer between the wafer and the MEMS membrane, and the buffer protection layer is located in a slit of the MEMS membrane and on a surface of the MEMS membrane facing away from the isolation layer; etching the wafer to form a cavity such that a portion of the isolation layer is exposed though the cavity; etching the portion of the isolation layer; and removing the buffer protection layer.
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62.发明公开公开(公告)号：US20240208801A1
公开(公告)日：2024-06-27
申请号：US17747879
申请日：2022-05-18
Applicant: UPBEAT TECHNOLOGY Co., Ltd
Inventor： Hsi-Wen TUNG , Hsien-Lung HO
CPC classification number: B81B3/0021 , B81C1/00182 , B81B2201/0257 , B81B2201/0285 , B81B2203/0315 , B81B2203/0353 , B81C2201/013 , B81C2201/0159 , B81C2201/053
Abstract: A MEM vibration sensor includes a substrate and a sensing-device. The substrate includes a first supporting-portion and a cavity. The sensing-device includes a first sensing-unit, a second sensing-unit, a first metal pad and a second metal pad. The first sensing-unit includes a second supporting-portion and a vibrating-portion. The second supporting-portion is located on the first supporting-portion and is connected to the first supporting-portion via a first dielectric material. The vibrating-portion is located on the cavity, and is connected with the second supporting-portion through an elastic connecting-portion. The second sensing-unit is located on the first sensing-unit and includes a sensing-portion and a third supporting-portion. The sensing-portion is located on the vibrating-portion and has a gap with the vibrating-portion. The third supporting-portion is located on the second supporting-portion, is connected to the sensing-portion, and is connected to the second supporting-portion through a second dielectric material.
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公开(公告)号：US20230365396A1
公开(公告)日：2023-11-16
申请号：US18142373
申请日：2023-05-02
Applicant: TDK CORPORATION
Inventor： Toyotaka KOBAYASHI
CPC classification number: B81B3/0021 , B81C1/00158 , B81B2201/0257 , B81B2203/0315 , B81B2203/0353 , B81B2207/015 , B81C2201/0154 , B81C2201/0159
Abstract: Disclosed herein is a MEMS sensor package that includes a substrate, an annular-shaped first dry film pattern stuck to one surface of the substrate, and a MEMS sensor chip including a tubular support and a detection part which is supported on the support so as to overlap a cavity of the support. The MEMS sensor chip is fixed to the substrate by sticking an annular mounting surface of the support to the first dry film pattern.
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64.发明授权公开(公告)号：US11673798B2
公开(公告)日：2023-06-13
申请号：US17084389
申请日：2020-10-29
Inventor： Gabriel Fernando Puebla Hellmann , Diego Monserrat Lopez , Ute Drechsler , Marcel Mayor , Emanuel Marc Löertscher
CPC classification number: B81C1/00119 , B01L3/502707 , B01L3/502715 , B81B1/002 , B01L2200/12 , B01L2300/12 , B01L2300/168 , B81B2201/058 , B81B2203/0353 , B81B2203/04 , B81C2201/0132 , B81C2201/0159 , B81C2201/0178
Abstract: A device includes a first layer of an electrically insulating material and a second layer of a non-electrically insulating material (e.g., semiconductor or electrically conductive) extending on the first layer. The second layer is structured so as to define opposite, lateral walls of a microchannel, a bottom wall of which is defined by an exposed surface of the first layer. The second layer is further structured to form one or more electrical insulation barriers; each barrier includes a line of through holes, each surrounded by an oxidized region of the material of the second layer. The through holes alternate with oxidized portions of the oxidized region along the line. Each barrier extends, as a whole, laterally across the second layer up to one of the lateral walls and delimits two sections of the second layer on each side of the barrier and on a same side of the microchannel.
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65.发明授权公开(公告)号：US11644757B2
公开(公告)日：2023-05-09
申请号：US16721786
申请日：2019-12-19
Applicant: Intel Corporation
Inventor： Changhua Liu , Jianyong Mo , Liang Zhang
CPC classification number: G03F7/70733 , B81B1/00 , B81C1/00111 , G03F7/201 , B81B2203/0361 , B81C2201/0159
Abstract: Embodiments disclosed herein include lithographic patterning systems for non-orthogonal patterning and devices formed with such patterning. In an embodiment, a lithographic patterning system comprises an actinic radiation source, where the actinic radiation source is configured to propagate light along an optical axis. In an embodiment, the lithographic patterning system further comprises a mask mount, where the mask mount is configurable to orient a surface of a mask at a first angle with respect to the optical axis. In an embodiment, the lithographic patterning system further comprises a lens module, and a substrate mount, where the substrate mount is configurable to orient a surface of a substrate at a second angle with respect to the optical axis.
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Patent Agency Ranking
公开(公告)号：US09828241B2
公开(公告)日：2017-11-28
申请号：US15197418
申请日：2016-06-29
Applicant: HYUNDAI MOTOR COMPANY
Inventor： Ilseon Yoo
CPC classification number: B81C1/00269 , B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81B2203/04 , B81C2201/013 , B81C2201/0159 , B81C2203/0118 , B81C2203/031 , B81C2203/035 , B81C2203/036
Abstract: A manufacturing method of a MEMS sensor includes forming a first substrate, wherein the first substrate includes a lower electrode provided at one surface thereof, forming a second substrate, wherein the second substrate includes a first concave-convex portion provided at one surface thereof, first-bonding one surface of the first substrate and one surface of the second substrate to face each other, forming a third substrate, wherein the third substrate includes an upper electrode provided at one surface thereof, second-bonding another surface of the second substrate and one surface of the third substrate to face each other, and forming an electrode line on another surface of the third substrate to be connected to the lower electrode and the upper electrode.
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公开(公告)号：US20170247247A1
公开(公告)日：2017-08-31
申请号：US15053456
申请日：2016-02-25
Applicant: Freescale Semiconductor, Inc.
Inventor： Qing Zhang , Mohommad Choudhuri , Gul Zeb
CPC classification number: B81B7/008 , B81B2201/0214 , B81B2207/015 , B81B2207/07 , B81C1/00246 , B81C2201/0159 , B81C2201/016 , B81C2201/019 , G01N27/223
Abstract: A semiconductor device composed of a capacitive humidity sensor comprised of a moisture-sensitive polymer layer electrografted to an electrically conductive metal layer situated on an CMOS substrate or a combined MEMS and CMOS substrate, and exposed within an opening through a passivation layer, packages composed of the encapsulated device, and methods of forming the capacitive humidity sensor within the semiconductor device, are provided.
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公开(公告)号：US20170246611A1
公开(公告)日：2017-08-31
申请号：US15444010
申请日：2017-02-27
Applicant: SMARTTIP BV
Inventor： Edin Sarajlic
IPC: B01J19/08 , C01B21/068 , B81C1/00
CPC classification number: B81C1/0015 , A61B5/150022 , A61B5/150282 , A61B5/150396 , A61B5/150511 , A61B5/150519 , A61B5/150984 , A61B5/15142 , A61M37/0015 , B81B2201/057 , B81B2201/12 , B81B2203/0118 , B81B2203/0353 , B81C1/00087 , B81C1/00111 , B81C1/00119 , B81C2201/0132 , B81C2201/0143 , B81C2201/0159 , B81C2201/0198 , C01B21/0687
Abstract: A method of manufacturing a plurality of through-holes in a layer of first material by subjecting part of the layer of said first material to ion beam milling.For batch-wise production, the method comprises after a step of providing the layer of first material and before the step of ion beam milling, providing a second layer of a second material on the layer of first material, providing the second layer of the second material with a plurality of holes, the holes being provided at central locations of pits in the first layer, and subjecting the second layer of the second material to said step of ion beam milling at an angle using said second layer of the second material as a shadow mask.
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公开(公告)号：US20170015548A1
公开(公告)日：2017-01-19
申请号：US14963362
申请日：2015-12-09
Applicant: Texas Instruments Incorporated
Inventor： Jie Mao , Hau Nguyen , Luu Nguyen , Anindya Poddar
CPC classification number: B81C1/00873 , B81B7/007 , B81B2201/0214 , B81B2201/0235 , B81B2201/0257 , B81B2201/0264 , B81B2201/0278 , B81B2201/0292 , B81B2201/047 , B81B2207/07 , B81B2207/098 , B81C1/00333 , B81C2201/0125 , B81C2201/0132 , B81C2201/0159 , B81C2201/0181 , B81C2201/0188 , B81C2203/0136 , H01L21/561 , H01L21/568 , H01L21/6836 , H01L23/3121 , H01L24/19 , H01L2221/68359 , H01L2224/04105 , H01L2224/96 , H01L2924/3511
Abstract: A method for fabricating packaged semiconductor devices (100) with an open cavity (110a) in panel format; placing (process 201) on an adhesive carrier tape a panel-sized grid of metallic pieces having a flat pad (230) and symmetrically placed vertical pillars (231); attaching (process 202) semiconductor chips (101) with sensor systems face-down onto the tape; laminating (process 203) and thinning (process 204) low CTE insulating material (234) to fill gaps between chips and grid; turning over (process 205) assembly to remove tape; plasma-cleaning assembly front side, sputtering and patterning (process 206) uniform metal layer across assembly and optionally plating (process 209) metal layer to form rerouting traces and extended contact pads for assembly; laminating (process 212) insulating stiffener across panel; opening (process 213) cavities in stiffener to access the sensor system; and singulating (process 214) packaged devices by cutting metallic pieces.
Abstract translation: 一种以面板格式制造具有开口腔（110a）的封装半导体器件（100）的方法; 将具有平垫（230）和对称放置的垂直柱（231）的金属片的面板尺寸网格放置（处理201）在粘合剂载带上。 将具有传感器系统的半导体芯片（工艺202）面朝下地附接到带上; 层压（工艺203）和减薄（工艺204）低CTE绝缘材料（234）以填充芯片和网格之间的间隙; 翻转（过程205）组装以去除胶带; 等离子体清洁组件正面，溅射和图案化（工艺206）跨组合均匀的金属层和任选的电镀（工艺209）金属层以形成重新布线迹线和扩展的接触垫用于组装; 层压（工艺212）跨板的绝缘加强件; 在加强件中打开（过程213）空腔以接近传感器系统; 并通过切割金属片来分割（处理214）包装的装置。
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70.发明申请公开(公告)号：US20160280537A1
公开(公告)日：2016-09-29
申请号：US15178512
申请日：2016-06-09
Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY
Inventor： Michael D. HENRY , Andrew P. HOMYK , Axel SCHERER , Thomas A. TOMBRELLO , Sameer WALAVALKAR
CPC classification number: B81C1/00111 , B01J19/0046 , B01J2219/00504 , B01J2219/00664 , B81B1/006 , B81B2203/0361 , B81B2207/056 , B81C2201/0112 , B81C2201/0132 , B81C2201/0133 , B81C2201/0159 , G01N1/405 , H01L21/3065 , H01L21/30655 , H01L21/3081 , H01L21/3086 , Y10T436/25375
Abstract: Methods for fabricating of high aspect ratio probes and deforming micropillars and nanopillars are described. Use of polymers in deforming nanopillars and micropillars is also described.
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