METHODS AND APPARATUS FOR INSPECTION OF ARTICLES, EUV LITHOGRAPHY RETICLES, LITHOGRAPHY APPARATUS AND METHOD OF MANUFACTURING DEVICES.

    公开(公告)号:NL2007108A

    公开(公告)日:2012-02-06

    申请号:NL2007108

    申请日:2011-07-14

    Abstract: An article such as an EUV lithography reticle is inspected to detect contaminant particles. The method comprises applying a fluorescent dye material to the article, illuminating the article with radiation at wavelengths suitable for exciting the fluorescent dye, monitoring the article for emission of second radiation by the fluorescent dye at a wavelength different from the first radiation, and generating a signal representing contamination in the event of detecting the second radiation. In one example, measures such as low-affinity coatings may be applied to the reticle to reduce affinity for the dye molecules, while the dye molecules will bind by physical or chemical adsorption to the contaminant particles. Dyes may be selected to have fluorescence behavior enhanced by hydrophobicity or hydrophilicity, and contaminant surfaces treated by buffer coatings accordingly.

    OBJECT INSPECTION SYSTEMS AND METHODS

    公开(公告)号:SG176740A1

    公开(公告)日:2012-01-30

    申请号:SG2011090974

    申请日:2010-07-02

    Abstract: Methods and systems for inspection of an object include the use of spectroscopic techniques for the detection of unwanted particles on an object's surface, based on the different responses of the unwanted particles as compared with the object to be inspected due to their different materials. Time resolved spectroscopy and/or energy resolved spectroscopy of secondary photon emission from the surface of the object can be used to obtain Raman and photoluminescence spectra. The objects to be inspected can for example be a patterning device as used in a lithographic process, for example a reticle, in which case the presence of metal, metal oxide or organic particles can be detected, for example. The methods and apparatus are highly sensitive, for example, being able to detect small particles (sub 100 nm, particularly sub 50 nm) on the patterned side of an EUV reticle.

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