公开(公告)号：DE10255599A1

公开(公告)日：2004-04-22

申请号：DE10255599

申请日：2002-11-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LUYKEN JOHANNES ,  HANEDER THOMAS ,  HOFMANN FRANZ ,  FRITZ MICHAELA ,  HANKE HANS-CHRISTIAN ,  DERTINGER STEPHAN ,  MARTIN ALFRED ,  LEHMANN VOLKER

IPC: H01L31/102

公开(公告)号：DE10212962A1

公开(公告)日：2003-10-16

申请号：DE10212962

申请日：2002-03-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHMID GUENTER ,  HALIK MARCUS ,  KLAUK HAGEN ,  DEHM CHRISTINE ,  HANEDER THOMAS ,  MIKOLAJICK THOMAS

IPC: G11C13/02 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8246 ,  H01L51/20 ,  H01L51/30 ,  G11C11/21

Abstract: A semiconductor memory cell has a field-effect transistor device and a ferroelectric storage capacitor. The field-effect transistor device has a channel region that includes or is made of an organic semiconductor material. Besides a first gate electrode of the gate electrode configuration of the field-effect transistor device, an additional selection gate electrode is provided, by way of which the field-effect transistor device can be switched off without influencing the storage dielectric and independently of the first gate electrode.

公开(公告)号：DE10212926A1

公开(公告)日：2003-10-16

申请号：DE10212926

申请日：2002-03-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHMID GUENTER ,  HALIK MARCUS ,  KLAUK HAGEN ,  DEHM CHRISTINE ,  HANEDER THOMAS ,  MIKOLAJICK THOMAS

IPC: G11C11/56 ,  G11C13/02 ,  H01L27/10 ,  H01L29/78 ,  H01L27/115

Abstract: Semiconductor storage cell has a modulation region (M) arranged between first gate electrode (G1) of gate electrode arrangement,and an insulating region. (M) is made from a material which can be controllably modulated with respect to its electrical and/or its wide material properties between at least two states. The channel region can be electromagnetically influenced according to the states of the modulation material, especially when there is an electrical potential difference between the first gate electrode and the source/drain regions (SD1, SD2). The electrical conductivity of the channel region can be controlled via the states of the modulation material and/or via the state changes. The modulation region is made from an organic and/or inorganic material, especially in the form of a mono-layer.

公开(公告)号：DE10041699A1

公开(公告)日：2002-03-21

申请号：DE10041699

申请日：2000-08-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BACHHOFER HARALD ,  HANEDER THOMAS ,  SPINDLER OSWALD ,  WASER RAINER

IPC: H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8239 ,  H01L41/22

Abstract: In a method for producing ferroelectric strontium bismuth tantalate having the composition SrxBiyTa2O9 (SBT) or SrxBiy(Ta, Nb)2O9 (SBTN), the element strontium, which is normally present in an amount y=2, is provided in excess in a range from 2.1

公开(公告)号：DE10009762A1

公开(公告)日：2001-09-20

申请号：DE10009762

申请日：2000-03-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HANEDER THOMAS ,  BACHHOFER HARALD ,  HOENLEIN WOLFGANG ,  SCHINDLER GUENTHER ,  HARTNER WALTER

IPC: H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108

Abstract: Production of a storage capacitor comprises preparing a first electrode layer (1); applying a 1 nm thick CeO2 layer (2) on the electrode layer; applying an amorphous dielectric layer (3) made from SrBi2Ta2O9 (SBT) or SrBi2(TaNb)2O9 (SBTN) on the CeO2 layer; heating at 590-620[deg] C to crystallize the dielectric layer; and applying a second electrode layer (4) on the dielectric layer. An independent claim is also included for a process for the production of a semiconductor component comprising forming a switching transistor on a semiconductor substrate; and forming the storage capacitor on the transistor. Preferred Features: The electrode layers are made from platinum, a conducting oxide of a platinum or an inert and conducting oxide. The dielectric layer is 20-200 nm thick.

公开(公告)号：DE19947117A1

公开(公告)日：2001-04-12

申请号：DE19947117

申请日：1999-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STENGL REINHARD ,  REISINGER HANS ,  HANEDER THOMAS ,  BACHHOFER HARALD

IPC: H01L21/8247 ,  H01L21/8246 ,  H01L27/105 ,  H01L29/51 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  G11C11/22

Abstract: According to the invention, a first source-drain region (121), a channel region (13) and a second source-drain region (122) are located in a semiconductor substrate (11). A dielectric layer (14) covers at least the surface of the channel region and parts of the first source-drain region. On the surface of said dielectric layer, a ferroelectric layer (17) is provided between two polarization electrodes (16, 18). A gate electrode is positioned on the surface of the dielectric layer. The thickness of the dielectric layer is measured in such a way that a remanent polarization of the ferroelectric layer which is aligned between the two polarization electrodes, generates compensation charges in one section of the channel region. The ferroelectric transistor is suitable for use a memory cell in a memory cell arrangement.

公开(公告)号：DE19940381A1

公开(公告)日：2001-04-05

申请号：DE19940381

申请日：1999-08-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HANEDER THOMAS

IPC: H01L21/02 ,  H01L29/51 ,  H01L29/78 ,  H01L21/336

公开(公告)号：DE102005062932A1

公开(公告)日：2007-07-12

申请号：DE102005062932

申请日：2005-12-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LEHMANN VOLKER ,  BINDER FLORIAN ,  HANEDER THOMAS ,  SOMMER GRIT ,  SCHNEEGANS MANFRED

IPC: H01L23/12 ,  H01L23/498 ,  H01L23/50 ,  H01L23/58 ,  H05K1/11

Abstract: A carrier has a substrate (12) with boundary layers (14, 16), where respective contact holes (22, 24) are formed in the boundary layers. The contact holes are connected with each other by electrically conducive contact channels (26). Capacitor electrodes (46, 48) are provided for electrically connecting microelectronic components and/or integrated circuits with terminals of signal or supply voltages. The electrode (46) is capacitively coupled to an electrically conductive area of a metallization layer and/or the substrate via capacitor dielectrics (28, 36).

公开(公告)号：DE50104250D1

公开(公告)日：2004-11-25

申请号：DE50104250

申请日：2001-12-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GOEBEL HOLGER ,  HOENIGSCHMID HEINZ ,  HOENLEIN WOLFGANG ,  HANEDER THOMAS ,  ULLMANN MARC

IPC: G11C11/22 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/788 ,  H01L29/792

Abstract: The state is read out from the ferroelectric transistor or stored in the ferroelectric transistor. During the read-out or storage of the state, at least one further ferroelectric transistor in the memory matrix is driven in such a way that it is operated in its depletion region.

公开(公告)号：DE10211900A1

公开(公告)日：2003-10-16

申请号：DE10211900

申请日：2002-03-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HANEDER THOMAS ,  THEWES ROLAND ,  SCHMID GUENTER ,  KLAUK HAGEN

IPC: G01N27/414 ,  G01N33/543 ,  H01L27/28 ,  H01L51/05 ,  G01N33/50 ,  C12Q1/68 ,  G01N33/68