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    REMOVAL OF STRESSOR LAYER FROM A SPALLED LAYER AND METHOD OF MAKING A BIFACIAL SOLAR CELL USING THE SAME
    21.
    发明申请
    REMOVAL OF STRESSOR LAYER FROM A SPALLED LAYER AND METHOD OF MAKING A BIFACIAL SOLAR CELL USING THE SAME 审中-公开
    从粉末层去除压力层和使用其制造双极太阳能电池的方法

    公开(公告)号：WO2013181117A3

    公开(公告)日：2014-04-03

    申请号：PCT/US2013042772

    申请日：2013-05-24

    Applicant: IBM

    Inventor： BEDELL STEPHEN W ,  FOGEL KEITH E ,  HEKMATSHOARTABARI BAHMAN ,  LAURO PAUL A ,  LI NING ,  SADANA DEVENDRA K ,  SHAHIDI GHAVAM G ,  SHAHRJERDI DAVOOD

    IPC: H01L31/18

    CPC classification number: H01L31/0684 ,  H01L21/02002 ,  H01L31/1896 ,  Y02E10/547

    Abstract: A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.

    Abstract translation: 以受控剥落方式使用的应力层通过使用可以断裂或溶解的裂开层去除。 在主体半导体衬底和金属应力层之间形成切割层。 受控的剥落过程将相对薄的残余主体衬底层与主体衬底分离。 在将手柄衬底附接到残留衬底层或随后在其上形成的其它层之后，解理层被溶解或以其他方式受到损害以便于去除应力层。 这种去除允许制造双面太阳能电池。

    SPALLING FOR A SEMICONDUCTOR SUBSTRATE
    22.
    发明申请
    SPALLING FOR A SEMICONDUCTOR SUBSTRATE 审中-公开
    用于半导体衬底的分离

    公开(公告)号：WO2011106203A3

    公开(公告)日：2011-11-17

    申请号：PCT/US2011024948

    申请日：2011-02-16

    Applicant: IBM ,  BEDELL STEPHEN W ,  FOGEL KEITH E ,  LAURO PAUL A ,  SADANA DEVENDRA ,  SHAHRJERDI DAVOOD

    Inventor： BEDELL STEPHEN W ,  FOGEL KEITH E ,  LAURO PAUL A ,  SADANA DEVENDRA ,  SHAHRJERDI DAVOOD

    IPC: H01L21/304 ,  B28D5/00

    CPC classification number: H01L31/075 ,  H01L21/02002 ,  H01L31/0725 ,  H01L31/074 ,  H01L31/076 ,  H01L31/184 ,  H01L31/1892 ,  Y02E10/548

    Abstract: A method for spalling a layer from an ingot of a semiconductor substrate includes forming a metal layer on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot; and removing the layer from the ingot at the fracture. A system for spalling a layer from an ingot of a semiconductor substrate includes a metal layer formed on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot, and wherein the layer is configured to be removed from the ingot at the fracture.

    Abstract translation: 一种用于从半导体衬底的晶锭剥落层的方法包括：在半导体衬底的晶块上形成金属层，其中金属层中的拉伸应力被配置为引起晶块中的断裂; 并在裂缝处从锭块中去除层。 用于从半导体衬底的晶锭剥落层的系统包括形成在半导体衬底的晶锭上的金属层，其中金属层中的拉应力被配置为引起晶块中的断裂，并且其中该层被配置 在骨折处从锭块中移出。

    METHOD OF FORMING STRAINED SILICON MATERIALS WITH IMPROVED THERMAL CONDUCTIVITY
    23.
    发明申请
    METHOD OF FORMING STRAINED SILICON MATERIALS WITH IMPROVED THERMAL CONDUCTIVITY 审中-公开
    形成具有改善的导热性的应变硅材料的方法

    公开(公告)号：WO2006017640B1

    公开(公告)日：2006-04-27

    申请号：PCT/US2005027691

    申请日：2005-08-04

    Applicant: IBM ,  BEDELL STEPHEN W ,  CHEN HUAJIE ,  FOGEL KEITH ,  MITCHELL RYAN M ,  SADANA DEVENDRA K

    Inventor： BEDELL STEPHEN W ,  CHEN HUAJIE ,  FOGEL KEITH ,  MITCHELL RYAN M ,  SADANA DEVENDRA K

    IPC: H01L21/36 ,  H01L21/20 ,  H01L31/117

    CPC classification number: H01L29/1054 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02507 ,  H01L21/02532

    Abstract: A method is disclosed for forming a strained Si layer on SiGe, where the SiGe layer has improved thermal conductivity. A first layer (41) of Si or Ge is deposited on a substrate (10) in a first depositing step; a second layer (42) of the other element is deposited on the first layer in a second depositing step; and the first and second depositing steps are repeated so as to form a combined SiGe layer (50) having a plurality of Si layers and a plurality of Ge layers (41-44). The respective thicknesses of the Si layers and Ge layers are in accordance with a desired composition ratio of the combined SiGe layer. The combined SiGe layer (50) is characterized as a digital alloy of Si and Ge having a thermal conductivity greater than that of a random alloy of Si and Ge. This method may further include the step of depositing a Si layer (61) on the combined SiGe layer (50); the combined SiGe layer is characterized as a relaxed SiGe layer, and the Si layer (61) is a strained Si layer. For still greater thermal conductivity in the SiGe layer, the first layer and second layer may be deposited so that each layer consists essentially of a single isotope.

    Abstract translation: 公开了一种在SiGe上形成应变Si层的方法，其中SiGe层具有改善的导热性。 在第一沉积步骤中，在衬底（10）上沉积Si或Ge的第一层（41） 在第二沉积步骤中将另一元素的第二层（42）沉积在第一层上; 并重复第一沉积步骤和第二沉积步骤以形成具有多个Si层和多个Ge层（41-44）的组合SiGe层（50）。 Si层和Ge层的各自厚度符合组合SiGe层的所需组成比。 组合的SiGe层（50）的特征在于Si和Ge的数字合金，其导热率大于Si和Ge的无规合金的导热率。 该方法可以进一步包括在组合的SiGe层（50）上沉积Si层（61）的步骤; 组合的SiGe层的特征在于弛豫SiGe层，并且Si层（61）是应变Si层。 为了在SiGe层中具有更大的导热性，可以沉积第一层和第二层，使得每个层基本上由单一的同位素组成。

    Verfahren für ein spontanes Spalling von Material bei niedriger Temperatur
    26.
    发明专利
    Verfahren für ein spontanes Spalling von Material bei niedriger Temperatur 未知

    公开(公告)号：DE112012002305T5

    公开(公告)日：2014-03-13

    申请号：DE112012002305

    申请日：2012-05-08

    Applicant: IBM ,  KING ABDULAZIZ CITY SCI & TECH

    Inventor： KHAYYAT MAHA M ,  SOSA CORTES NORMA E ,  SAENGER KATHERINE L ,  BEDELL STEPHEN W ,  SADANA DEVENDRA K

    IPC: H01L21/30

    Abstract: Es wird ein Verfahren bereitgestellt, um (i) eine zusätzliche Steuerung in einen Prozess für ein Spalling von Material einzubringen, um so sowohl die Initiierung von Rissen als auch die Ausbreitung von Rissen zu verbessern, und um (ii) den Bereich von auswahlbaren Spalling-Tiefen zu vergrößern. In einer Ausführungsform beinhaltet das Verfahren ein Bereitstellen einer Stressorschicht auf einer Oberfläche eines Grundsubstrats bei einer ersten Temperatur, welche die Raumtemperatur ist. Als Nächstes wird das Grundsubstrat, das die Stressorschicht beinhaltet, auf eine zweite Temperatur gebracht, die niedriger als Raumtemperatur ist. Das Grundsubstrat wird bei der zweiten Temperatur abgeplatzt, um eine abgeplatzte Materialschicht zu bilden. Danach wird die abgeplatzte Materialschicht auf Raumtemperatur, d. h. die erste Temperatur, zurückgebracht.

    Low-temperature methods for spontaneous material spalling
    27.
    发明专利
    Low-temperature methods for spontaneous material spalling 未知

    公开(公告)号：GB2503851A

    公开(公告)日：2014-01-08

    申请号：GB201318741

    申请日：2012-05-08

    Applicant: IBM

    Inventor： KHAYYAT MAHA M ,  CORTES NORMA E SOSA ,  SAENGER KATHERINE L ,  BEDELL STEPHEN W ,  SADANA DEVENDRA K

    IPC: H01L21/18 ,  H01L21/30

    Abstract: Method to (i) introduce additional control into a material spalling process, thus improving both the crack initiation and propagation, and (ii) increase the range of selectable spalling depths are provided. In one embodiment, the method includes providing a stressor layer on a surface of a base substrate at a first temperature which is room temperature. Next, the base substrate including the stressor layer is brought to a second temperature which is less than room temperature. The base substrate is spalled at the second temperature to form a spalled material layer. Thereafter, the spalled material layer is returned to room temperature, i.e., the first temperature.

    Spalling for a semiconductor substrate
    30.
    发明专利
    Spalling for a semiconductor substrate 未知

    公开(公告)号：GB2490606A

    公开(公告)日：2012-11-07

    申请号：GB201208994

    申请日：2011-02-16

    Applicant: IBM

    Inventor： BEDELL STEPHEN W ,  FOGEL KEITH E ,  LAURO PAUL A ,  SADANA DEVENDRA ,  SHAHRJERDI DAVOOD

    IPC: H01L21/02 ,  H01L31/18

    Abstract: A method for spalling a layer from an ingot of a semiconductor substrate includes forming a metal layer on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot; and removing the layer from the ingot at the fracture. A system for spalling a layer from an ingot of a semiconductor substrate includes a metal layer formed on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot, and wherein the layer is configured to be removed from the ingot at the fracture.

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