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公开(公告)号：KR20210007971A
公开(公告)日：2021-01-20
申请号：KR20207031906
申请日：2019-04-12
Applicant: ASML NETHERLANDS BV
Inventor： DE GRAAF DENNIS , BEAUDRY RICHARD , BIRON MAXIME , JANSSEN PAUL , KATER THIJS , KORNELSEN KEVIN , KUIJKEN MICHAEL ALFRED JOSEPHUS , KUNTZEL JAN HENDRIK WILLEM , MARTEL STEPHANE , NASALEVICH MAXIM ALEKSANDROVICH , SALMASO GUIDO , VAN ZWOL PIETER JAN
Abstract: 한면의마스크및 반대면의적어도하나의층을포함한웨이퍼가설명되며, 마스크는적어도하나의층이실질적으로없는반대면의적어도일부분위에놓이는적어도하나의스크라이브라인을포함한다. 또한, 한면의마스크및 반대면의적어도하나의층을포함한웨이퍼를제공하는단계, 마스크에서스크라이브라인을정의하는단계, 및적어도부분적으로스크라이브라인위에놓이는적어도하나의층의부분을선택적으로제거하는단계를포함하는펠리클제조방법, 및펠리클코어를제공하는단계, 및비-산화환경에서펠리클코어의적어도하나의면으로부터적어도일부재료를제거하는단계를포함하는펠리클제조방법이설명된다. 여하한의실시형태에서, 펠리클은금속질화물층을포함할수 있다.
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公开(公告)号：JP2011018903A
公开(公告)日：2011-01-27
申请号：JP2010151526
申请日：2010-07-02
Applicant: Asml Netherlands Bv , エーエスエムエル ネザーランズ ビー.ブイ.
Inventor： LOOPSTRA ERIK ROELOF , IVANOV VLADIMIR VITALEVICH , MOORS JOHANNES HUBERTUS JOSEPHINA , SWINKELS GERARDUS HUBERTUS PETRUS MARIA , YAKUNIN ANDREY MIKHAILOVICH , DE GRAAF DENNIS , STAMM UWE BRUNO HEINI
IPC: H01S3/08 , H01L21/027 , H01S3/00
CPC classification number: H05G2/003 , G03F7/70033 , H05G2/005 , H05G2/008
Abstract: PROBLEM TO BE SOLVED: To provide a radiation system capable of improving conversion efficiency of EUV radiation/emission plasma, and to provide a lithographic device.SOLUTION: The radiation system includes a target material source for supplying droplets of a target material along a track, and a laser system including an amplifier and an optical system. The optical system establishes a first beam path which passes through the amplifier and a first point on the track, and establishes a second beam path which passes through the amplifier and a second point on the track. When a photon emitted from the amplifier is reflected along the first beam path by the droplet of the target material at the first point on the track, the laser system generates a first pulse of laser radiation. When a photon emitted from the amplifier is reflected along the second beam path by the droplet of the target material at the second point on the track, the laser system generates a second pulse of laser radiation.
Abstract translation: 要解决的问题：提供能够提高EUV辐射/发射等离子体的转换效率并提供光刻设备的辐射系统。解决方案：辐射系统包括用于沿着轨道提供目标材料的液滴的靶材料源， 以及包括放大器和光学系统的激光系统。 光学系统建立通过放大器和轨道上的第一点的第一光束路径，并建立通过放大器的第二光束路径和轨道上的第二点。 当从放大器发射的光子沿着第一光束路径被轨道上的第一点处的目标材料的液滴反射时，激光系统产生第一激光辐射脉冲。 当从放大器发射的光子在轨道上的第二点处由靶材料的液滴沿着第二光束路径反射时，激光系统产生激光辐射的第二脉冲。
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公开(公告)号：WO2016124536A3
公开(公告)日：2016-10-06
申请号：PCT/EP2016052055
申请日：2016-02-01
Applicant: ASML NETHERLANDS BV
Inventor： BROUNS DERK SERVATIUS GERTRUDA , DE GRAAF DENNIS , DE KRUIF ROBERTUS CORNELIS MARTINUS , JANSSEN PAUL , KRUIZINGA MATTHIAS , NOTENBOOM ARNOUD WILLEM , SMITH DANIEL ANDREW , VERBRUGGE BEATRIJS LOUISE MARIE-JOSEPH KATRIEN , WILEY JAMES NORMAN
Abstract: A method comprising the steps of receiving a mask assembly comprising a mask and a removable EUV transparent pellicle held by a pellicle frame, removing the pellicle frame and EUV transparent pellicle from the mask, using an inspection tool to inspect the mask pattern on the mask, and subsequently attaching to the mask an EUV transparent pellicle held by a pellicle frame. The method may also comprise the following steps: after removing the pellicle frame and EUV transparent pellicle from the mask, attaching to the mask an alternative pellicle frame holding an alternative pellicle formed from a material which is substantially transparent to an inspection beam of the inspection tool; and after using an inspection tool to inspect the mask pattern on the mask, removing the alternative pellicle held by the alternative pellicle frame from the mask in order to attach to the mask the EUV transparent pellicle held by the pellicle frame.
Abstract translation: 一种方法，包括以下步骤：接收包括掩模和由薄膜框架保持的可移除EUV透明薄膜的掩模组件，使用检查工具从掩模移除薄膜框架和EUV透明薄膜，以检查掩模上的掩模图案， 随后将由EUV透明薄膜保持在薄膜框架上的面罩附着在面罩上。 所述方法还可以包括以下步骤：在从所述掩模移除所述薄膜框架和所述EUV透明薄膜之后，将替代的薄膜框架附接到所述掩模，所述薄膜框架保持由对所述检查工具的检查梁基本上透明的材料形成的替代薄膜 ; 并且在使用检查工具检查掩模上的掩模图案之后，从掩模去除由替代薄膜框架保持的替代薄膜，以便将由薄膜框架保持的EUV透明薄膜附着到掩模。
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公开(公告)号：CA3082273A1
公开(公告)日：2019-05-16
申请号：CA3082273
申请日：2018-11-06
Applicant: ASML NETHERLANDS BV
Inventor： HOUWELING ZOMER SILVESTER , ANDE CHAITANYA KRISHNA , DE GRAAF DENNIS , KATER THIJS , KUIJKEN MICHAEL ALFRED JOSEPHUS , VALEFI MAHDIAR
Abstract: A pellicle comprising a metal oxysilicide layer. Also disclosed in a pellicle comprising a molybdenum layer, a ruthenium layer and a silicon oxynitride layer, wherein the molybdenum layer is disposed between the ruthenium layer and the silicon oxynitride layer. Also disclosed is a method of manufacturing a pellicle for a lithographic apparatus, said method comprising: providing a metal oxysilicide layer, a lithographic assembly (LA) comprising a pellicle (15) comprising a metal oxysilicide layer, and the use of a pellicle comprising a metal oxysilicide layer in a lithographic apparatus.
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Patent Agency Ranking
公开(公告)号：CA2975806A1
公开(公告)日：2016-08-11
申请号：CA2975806
申请日：2016-02-01
Applicant: ASML NETHERLANDS BV
Inventor： BROUNS DERK SERVATIUS GERTRUDA , DE GRAAF DENNIS , DE KRUIF ROBERTUS CORNELIS MARTINUS , JANSSEN PAUL , KRUIZINGA MATTHIAS , NOTENBOOM ARNOUD WILLEM , SMITH DANIEL ANDREW , VERBRUGGE BEATRIJS LOUISE MARIE-JOSEPH KATRIEN , WILEY JAMES NORMAN
Abstract: A method comprising the steps of receiving a mask assembly comprising a mask and a removable EUV transparent pellicle held by a pellicle frame, removing the pellicle frame and EUV transparent pellicle from the mask, using an inspection tool to inspect the mask pattern on the mask, and subsequently attaching to the mask an EUV transparent pellicle held by a pellicle frame. The method may also comprise the following steps: after removing the pellicle frame and EUV transparent pellicle from the mask, attaching to the mask an alternative pellicle frame holding an alternative pellicle formed from a material which is substantially transparent to an inspection beam of the inspection tool; and after using an inspection tool to inspect the mask pattern on the mask, removing the alternative pellicle held by the alternative pellicle frame from the mask in order to attach to the mask the EUV transparent pellicle held by the pellicle frame.
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公开(公告)号：CA3099013A1
公开(公告)日：2019-11-07
申请号：CA3099013
申请日：2019-04-12
Applicant: ASML NETHERLANDS BV
Inventor： DE GRAAF DENNIS , BEAUDRY RICHARD , BIRON MAXIME , JANSSEN PAUL , KATER THIJS , KORNELSEN KEVIN , KUIJKEN MICHAEL ALFRED JOSEPHUS , KUNTZEL JAN HENDRIK WILLEM , MARTEL STEPHANE , NASALEVICH MAXIM ALEKSANDROVICH , SALMASO GUIDO , VAN ZWOL PIETER-JAN
Abstract: A wafer comprising a mask on one face and at least one layer on the opposite face, wherein the mask comprises at least one scribeline which overlies at least a portion of the opposite face which is substantially free of the at least one layer is described. Also described is a method of preparing a pellicle comprising the steps of: providing a wafer comprising a mask on one face and at least one layer on the opposite face, defining a scribeline in the mask, and selectively removing a portion of the at least one layer which at least partially overlies the scribeline as well as a method of preparing a pellicle comprising the steps of: providing a pellicle core, and removing at least some material from at least one face of the pellicle core in a non-oxidising environment. In any aspect, the pellicle may comprise a metal nitride layer.
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公开(公告)号：CA3008474A1
公开(公告)日：2017-06-22
申请号：CA3008474
申请日：2016-12-02
Applicant: ASML NETHERLANDS BV
Inventor： VAN ZWOL PIETER-JAN , DE GRAAF DENNIS , JANSSEN PAUL , PETER MARIA , VAN DE KERKHOF MARCUS ADRIANUS , VAN DER ZANDE WILLEM JOAN , VLES DAVID FERDINAND , VOORTHUIJZEN WILLEM-PIETER
Abstract: A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and comprising a stack comprising: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine
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公开(公告)号：CA3116145A1
公开(公告)日：2020-04-23
申请号：CA3116145
申请日：2019-10-02
Applicant: ASML NETHERLANDS BV
Inventor： VAN ZWOL PIETER-JAN , BALTUSSEN SANDER , DE GRAAF DENNIS , FRANKEN JOHANNES CHRISTIAAN LEONARDUS , GIESBERS ADRIANUS JOHANNES MARIA , KLEIN ALEXANDER LUDWIG , KLOOTWIJK JOHAN HENDRIK , KNAPEN PETER SIMON ANTONIUS , KURGANOVA EVGENIA , KUZNETSOV ALEXEY SERGEEVICH , NOTENBOOM ARNOUD WILLEM , VALEFI MAHDIAR , VAN DE KERKHOF MARCUS ADRIANUS , VAN DEN EINDEN WILHELMUS THEODORUS ANTHONIUS JOHANNES , VAN DER WOORD TIES WOUTER , WONDERGEM HENDRIKUS JAN , ZDRAVKOV ALEKSANDAR NIKOLOV
Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method comprising: providing a stack comprising: at least one membrane layer supported by a planar substrate, wherein the planar substrate comprises an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate, wherein the step of selectively removing the inner region of the planar substrate comprises using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer; such that the membrane assembly comprises: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border comprising the border region of the planar substrate and the first sacrificial layer situated between the border and the membrane layer.
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公开(公告)号：SG2014007694A
公开(公告)日：2014-03-28
申请号：SG2014007694
申请日：2012-07-27
Applicant: ASML NETHERLANDS BV
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