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    METHOD OF IMPLANTING BORON USING ISOTOPICALLY ENRICHED BORON PRECURSORS
    111.
    发明公开
    METHOD OF IMPLANTING BORON USING ISOTOPICALLY ENRICHED BORON PRECURSORS 审中-公开
    VERFAHREN ZUR植入物冯宝​​龙麻醉剂同种异体异黄酮BORONHALTIGEN VERBINDUNGEN

    公开(公告)号：EP2937314A1

    公开(公告)日：2015-10-28

    申请号：EP15171765.9

    申请日：2011-08-16

    Applicant: Advanced Technology Materials, Inc.

    Inventor： Kaim, Robert ,  Sweeney, Joseph D. ,  Byl, Oleg ,  Yedave, Sharad N. ,  Jones, Edward E. ,  Zou, Peng ,  Tang, Ying ,  Chambers, Barry Lewis ,  Ray, Richard S.

    IPC: C01B35/06 ,  C01B9/08

    CPC classification number: C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  Y02P20/134

    Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B 2 F 4 . Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

    Abstract translation: 包含两个或多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼同位素，其浓度或比例大于天然丰度浓度或比例 。 化合物可以具有B 2 F 4的化学式。 对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及存储和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。

    Focused ion beam system and method of making focal adjustment of ion beam
    114.
    发明公开
    Focused ion beam system and method of making focal adjustment of ion beam 有权
    系统功能系统（Ionenstrahl und Verfahren zur Fokussierung des Ionenstrahls）

    公开(公告)号：EP2874176A1

    公开(公告)日：2015-05-20

    申请号：EP14191939.9

    申请日：2014-11-05

    Applicant: JEOL Ltd.

    Inventor： Mihira, Tomohiro

    IPC: H01J37/21 ,  H01J37/28

    CPC classification number: H01J37/304 ,  H01J37/21 ,  H01J37/28 ,  H01J37/3005 ,  H01J2237/0492 ,  H01J2237/08 ,  H01J2237/10 ,  H01J2237/21 ,  H01J2237/216 ,  H01J2237/2448 ,  H01J2237/30472 ,  H01J2237/31749

    Abstract: A focused ion beam system is offered which can make a focal adjustment without relying on the structure of a sample while suppressing damage to the sample to a minimum. Also, a method of making this focal adjustment is offered. The focused ion beam system has an ion source (10) for producing an ion beam (B), a lens system for focusing the beam onto the sample (S), a detector (26) for detecting secondary electrons emanating from the sample, and a controller (42) for controlling the lens system. The controller (42) is operative to provide control such that the sample (S) is irradiated with the ion beam (B) without scanning the beam and that a focus of the ion beam (B) is varied by varying the intensity of the objective lens (20) during the ion beam irradiation. Also, the controller (42) measures the intensity of a signal indicating secondary electrons emanating from the sample (S) while the intensity of the objective lens (20) is being varied. Furthermore, the controller (42) makes a focal adjustment of the ion beam (B) on the basis of the intensity of the objective lens (20) obtained when the measured intensity of the signal indicating secondary electrons is minimal.

    Abstract translation: 提供聚焦离子束系统，可以进行焦点调整，而不依赖于样品的结构，同时将样品的损伤抑制在最小。 此外，提供了进行该焦点调整的方法。 聚焦离子束系统具有用于产生离子束（B）的离子源（10），用于将光束聚焦到样品（S）上的透镜系统，用于检测从样品发出的二次电子的检测器（26），以及 用于控制透镜系统的控制器（42）。 控制器（42）可操作以提供控制，使得样品（S）在不扫描光束的情况下被照射离子束（B），并且通过改变物镜的强度来改变离子束（B）的焦点 透镜（20）。 此外，控制器（42）测量在物镜（20）的强度变化的同时指示从样品（S）发出的二次电子的信号的强度。 此外，控制器（42）基于当指示二次电子的信号的测量强度最小时获得的物镜（20）的强度，对离子束（B）进行焦点调整。

    Ion beam source
    119.
    发明公开
    Ion beam source 审中-公开
    Ionstrahlenquelle

    公开(公告)号：EP2333807A2

    公开(公告)日：2011-06-15

    申请号：EP10275127.8

    申请日：2010-12-14

    Applicant: SPP Process Technology Systems UK Limited

    Inventor： Macneil, John ,  Bennet, Paul George

    IPC: H01J27/02

    CPC classification number: H01J27/022 ,  H01J37/24 ,  H01J2237/0206 ,  H01J2237/08 ,  H01J2237/3146

    Abstract: This invention relates an ion beam source (10) for use with a non-electrical conducting target (14) including a grid (13) for extracting ions and a power supply for supplying pulsed power to the grid (13) to extract the ions.

    Abstract translation: 本发明涉及一种用于非导电靶（14）的离子束源（10），其包括用于提取离子的栅极（13）和用于向栅极（13）提供脉冲功率以提取离子的电源。

    SOURCE MICRONIQUE D'ÉMISSION IONIQUE
    120.
    发明公开
    SOURCE MICRONIQUE D'ÉMISSION IONIQUE 审中-公开
    MICRO来源ION排放

    公开(公告)号：EP2168136A2

    公开(公告)日：2010-03-31

    申请号：EP08828202.5

    申请日：2008-07-08

    Applicant: Orsay Physics

    Inventor： SUDRAUD, Pierre ,  SALORD, Olivier ,  HOUEL, Arnaud

    IPC: H01J27/26 ,  H01J37/08

    CPC classification number: H01J27/26 ,  H01J2237/08

    Abstract: The invention relates to an ionic emission device that comprises an emission member including a hollow insulation needle (10), said hollow needle having an electrically insulating tip (16) protruding at the apex (13) thereof. The needle (10) also includes a chamber (11) having an outlet opening (14) that opens in the vicinity of the tip (16). The invention also relates to a focused ionic emission method that uses the above emission device and an extraction electrode, wherein said device comprises applying an extraction voltage to said extraction electrode. Moreover, as the device includes an adjustment electrode, the method also comprises the application of an adjustment voltage to said electrode.

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