公开(公告)号：SG173957A1

公开(公告)日：2011-09-29

申请号：SG2011005733

申请日：2011-01-26

Applicant: ASML NETHERLANDS BV

Inventor： MENCHTCHIKOV BORIS ,  PADIY ALEXANDER

Abstract: A lithographic exposure process is performed on a substrate using a scanner.The scanner comprises several subsystems. There are errors in the overlay arising from the subsystems during the exposure. The overlay errors are measured using a scatterometer to obtain overlay measurements. Modeling is performed to separately determine from the overlay measurements different subsets of estimated modelparameters, for example field distortion model parameters, scan/step direction model parameters and position/deformation model parameters. Each subset is related to overlay errors arising from a corresponding specific subsystem of the lithographic apparatus. Finally, the exposure is controlled in the scanner by controlling a specific subsystem of the scanner using its corresponding subset of estimated modelparameters. This results in a product wafer being exposed with a well controlled overlay. [Figure 9]

公开(公告)号：DE602005018150D1

公开(公告)日：2010-01-21

申请号：DE602005018150

申请日：2005-10-14

Applicant: ASML NETHERLANDS BV

Inventor： OTTENS JOOST JEROEN ,  MERTENS JEROEN JOHANNES SOPHIA MARIA ,  DE JONG FREDERICK EDUARD ,  GOORMAN KOEN ,  MENCHTCHIKOV BORIS ,  VAN GOMPEL EDWIN AUGUSTINUS MATHEUS

IPC: G03F7/20 ,  H01L21/00

Abstract: A lithographic apparatus includes a substrate support (2) that is constructed to support a substrate (6), and a projection system (4) that is configured to project a patterned radiation beam (5) onto a target portion of the substrate. The substrate support is arranged to move the substrate along a predetermined trajectory (7) of subsequently targeted target portions of the substrate. The substrate support includes a duct configuration (1) for providing thermal stabilization to the substrate. The duct configuration is arranged to duct thermally stabilizing media in the support, and to substantially duct the media away from a part of the substrate support that supports the target portion via parts of the substrate support that support previously targeted portions of the substrate, so as to keep subsequently targeted target portions thermally stable.

公开(公告)号：NL2005989A

公开(公告)日：2011-08-23

申请号：NL2005989

申请日：2011-01-12

Applicant: ASML NETHERLANDS BV

Inventor： MENCHTCHIKOV BORIS ,  PADIY ALEXANDRE VIKTOROVYCH

IPC: G03F7/20

公开(公告)号：NL2006099A

公开(公告)日：2011-08-22

申请号：NL2006099

申请日：2011-01-31

Applicant: ASML NETHERLANDS BV

Inventor： MENCHTCHIKOV BORIS ,  PADIY ALEXANDRE VIKTOROVYCH

IPC: G03F7/20

Abstract: System parameters are checked through self-assessment of a production wafer without a reference or a monitor wafer. In particular, exposure errors and substrate table positioning errors can be corrected for.

公开(公告)号：NL2005996A

公开(公告)日：2011-08-22

申请号：NL2005996

申请日：2011-01-13

Applicant: ASML NETHERLANDS BV

Inventor： PADIY ALEXANDRE VIKTOROVYCH ,  MENCHTCHIKOV BORIS

IPC: G03F7/20

公开(公告)号：SG113011A1

公开(公告)日：2005-07-28

申请号：SG200407675

申请日：2004-12-22

Applicant: ASML NETHERLANDS BV

Inventor： OTTENS JOOST JEROEN ,  VAN DER SCHOOT HARMEN KLASS ,  STARREVELD JEROEN PIETER ,  MAAS WOUTERUS JOHANNES PETRUS ,  VENEMA WILLEM JURRIANUS ,  MENCHTCHIKOV BORIS

IPC: G03F9/00 ,  G03F7/20 ,  H01L21/027

Abstract: A method and apparatus of correcting thermally-induced field deformations of a lithographically exposed substrate, is presented herein. In one embodiment, the method includes exposing a pattern onto a plurality of fields of a substrate in accordance with prespecified exposure information and measuring attributes of the fields to assess deformation of the fields induced by thermal effects of the exposing process. The method further includes determining corrective information based on the measured attributes, and adjusting the prespecified exposure information, based on the corrective information, to compensate for the thermally-induced field deformations. Other embodiments include the use of predictive models to predict thermally-induced effects on the fields and thermographic imaging to determine temperature variations across a substrate.

公开(公告)号：NL2006923A

公开(公告)日：2012-12-11

申请号：NL2006923

申请日：2011-06-09

Applicant: ASML NETHERLANDS BV

Inventor： PADIY ALEXANDER VIKTOROVYCH ,  MENCHTCHIKOV BORIS ,  MIDDLEBROOKS SCOTT

IPC: G03F7/20

公开(公告)号：SG183108A1

公开(公告)日：2012-09-27

申请号：SG2012053658

申请日：2011-01-14

Applicant: ASML NETHERLANDS BV

Inventor： PADIY ALEXANDRE VIKTOROVYCH ,  MENCHTCHIKOV BORIS

Abstract: A method controls a scanning function of a lithographic apparatus. A first alignment strategy is used. A monitor wafer is exposed to determine baseline control parameters pertaining to the scanning function. The baseline control parameters are periodically retrieved from the monitor wafer. Parameter drift is determined from the baseline control parameters. Corrective action is taken based on the determination. A production wafer is exposed using a second alignment strategy, different to the first alignment strategy. The corrective action is modified so as to be substantially closer to the correction that would have been made had the second alignment strategy been used in exposing the monitor wafer.

公开(公告)号：NL2006150A

公开(公告)日：2011-03-10

申请号：NL2006150

申请日：2011-02-07

Applicant: ASML NETHERLANDS BV

Inventor： MENCHTCHIKOV BORIS ,  PADIY ALEXANDRE VIKTOROVYCH

IPC: G03F7/20

公开(公告)号：SG120255A1

公开(公告)日：2006-03-28

申请号：SG200505017

申请日：2005-08-08

Applicant: ASML NETHERLANDS BV

Inventor： CADEE THEODORUS PETRUS MARIA C ,  JACOBS JOHANNES HENRICUS WILHE ,  TEN KATE NICOLAAS ,  LOOPSTRA ERIK ROELOF ,  VAN MEER ASCHWIN LODEWIJK HEND ,  MERTENS JEROEN JOHANNES SOPHIA ,  DE MOL CHRISTIANUS GERARDUS MA ,  MUITJENS MARCEL JOHANNUS ELISA ,  VAN DER NET ANTONIUS JOHANNUS ,  OTTENS JOOST JEROEN ,  QUAEDACKERS JOHANNES ANNA ,  REUHMAN-HUISKEN MARIA ELISABET ,  STAVENGA MARCO KOERT ,  TINNEMANS PATRICIUS ALOYSIUS J ,  VERHAGEN MARTINUS CORNELIS MAR ,  VERSPAIJ JACOBUS JOHANNUS LEON ,  DE JONG FREDERIK EDUARD ,  GOORMAN KOEN ,  MENCHTCHIKOV BORIS ,  BOOM HERMAN ,  NIHTIANOV STOYAN ,  MOERMAN RICHARD ,  SMEETS MARTIN FRANS PIERRE ,  SCHOONDERMARK BART LEONARD PET ,  JANSSEN FRANCISCUS JOHANNES JO ,  RIEPEN MICHEL

IPC: G03F7/20

Abstract: A lithographic apparatus comprising: an illumination system (IL) configured to condition a radiation beam (PB); a support (MT) constructed to support a patterning device (MA), the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table (WT) constructed to hold a substrate (W); a projection system (PL) configured to project the patterned radiation beam onto a target portion of the substrate; a liquid supply system (130) configured to at least partly fill a space (25) between a final element of said projection system and said substrate with liquid; a seal member (12) arranged substantially to contain said liquid within said space between said final element of the projection system and said substrate; and elements (30,50,60,120,140) to control and/or compensate for evaporation of immersion liquid from said substrate.