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公开(公告)号：KR101011528B1
公开(公告)日：2011-01-27
申请号：KR1020080028259
申请日：2008-03-27
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/304
CPC classification number: H01L21/67051 , H01L21/6708
Abstract: 본 발명은 기판의 이면이나 주연부에 부착된 이물질을 완전히 제거할 수 있는 기판 처리 시스템을 제공한다. 기판 처리 시스템(10)이 구비하는 기판 세정 장치로서의 프로세스 모듈(15)은 웨이퍼(W)를 수용하는 챔버(38)와, 상기 챔버(38) 내의 바닥부에 배치되어 웨이퍼(W)를 탑재하는 스테이지(39)와, 챔버(38) 내의 천장부에 배치되어 스테이지(39)에 대향하는 샤워 헤드(40)를 구비하고, 스테이지(39)는 웨이퍼(W)의 이면이나 주연부를 향하여 액상 및 기상의 2개의 상 상태를 띠는 세정 물질, 예컨대, 순수와, 불활성 가스, 예컨대, 질소 가스가 혼합된 세정제를 분출하고, 샤워 헤드(40)는 웨이퍼(W)의 표면을 향한 다운 플로우를 발생시킨다.
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公开(公告)号：KR1020100071012A
公开(公告)日：2010-06-28
申请号：KR1020090126241
申请日：2009-12-17
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302 , H01L21/3065 , H01L21/304
CPC classification number: H01L21/02057 , H01J37/32862 , Y10S438/905 , Y10S438/906
Abstract: PURPOSE: A cleaning solution and a storage medium are provided to easily clean components while preventing a foreign particle from being attached to a different component. CONSTITUTION: A foreign material absorption member(20) is carried into the inside of a process chamber. The foreign material absorption member is loaded in a main chuck(12). Plasma is generated in the neighborhood of the foreign material absorption member. The plasma becomes extinct. In the process chamber, the foreign material absorption member is carried out.
Abstract translation: 目的：提供清洁溶液和存储介质以便容易地清洁组分，同时防止外来颗粒附着到不同的组分上。 构成：异物吸收构件（20）被运送到处理室的内部。 异物吸收部件装载在主卡盘（12）中。 在异物吸收构件附近产生等离子体。 等离子体灭绝。 在处理室中，进行异物吸收构件。
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公开(公告)号：KR1020100007812A
公开(公告)日：2010-01-22
申请号：KR1020090063576
申请日：2009-07-13
Applicant: 도쿄엘렉트론가부시키가이샤
Abstract: PURPOSE: A foreign material detecting method, a foreign material detecting device, a foreign material detecting system, and a storage medium are provided to perform a foreign material detection and a component analysis on the same substrate. CONSTITUTION: A foreign material detecting method is as follows. The moisture around foreign materials is selectively condensed by controlling vapor pressure surrounding a substrate. Ice crystals are generated from the condensed moisture by controlling a saturated vapor pressure curve when the foreign materials are not attached to the surface of the substrate. The surface of the substrate is optically inspected. The temperature of the substrate falls and the saturated vapor pressure, when the foreign materials are not attached on the surface of the substrate, is controlled to produce the vapor pressure.
Abstract translation: 目的：提供异物检测方法，异物检测装置，异物检测系统和存储介质，以在同一基板上进行异物检测和成分分析。 构成：异物检测方法如下。 通过控制衬底周围的蒸汽压来选择性地冷凝异物周围的水分。 当外来物质未附着于基材表面时，通过控制饱和蒸气压曲线，从冷凝水分产生冰晶。 对基板的表面进行光学检查。 当外部材料未附着在基板的表面上时，基板的温度下降，饱和的蒸气压被控制以产生蒸气压。
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公开(公告)号：KR1020090103711A
公开(公告)日：2009-10-01
申请号：KR1020090016236
申请日：2009-02-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H01L21/66
CPC classification number: H01J37/32972 , H01L21/67069
Abstract: PURPOSE: A plasma processing apparatus is provided to prevent waste due to replacement of a part which is not old. CONSTITUTION: A plasma processing apparatus includes a plurality of parts inside a chamber. A chemical element layer(51,52,53) for detecting lifetime made of element different from the parts inside the chamber is formed in the parts inside the chamber. The chemical element layer for detecting lifetime is formed in a position corresponding to a worn surface of the parts inside the chamber, and is formed in a depth corresponding to a maximum value of allowable worn thickness of the parts inside the chamber.
Abstract translation: 目的：提供等离子体处理装置，以防止由于更换不老的部件而造成的浪费。 构成：等离子体处理装置包括室内的多个部分。 在室内的部分中形成用于检测由与室内部不同的元件制成的寿命的化学元素层（51,52,53）。 用于检测寿命的化学元素层形成在与腔室内的部件的磨损表面相对应的位置，并且形成为与腔室内的部件的允许磨损厚度的最大值相对应的深度。
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公开(公告)号：KR1020090012054A
公开(公告)日：2009-02-02
申请号：KR1020080061061
申请日：2008-06-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/68 , H01L21/677
CPC classification number: H01L21/67766 , H01L21/67778 , H01L21/67781 , H01L21/68707 , Y10S414/137
Abstract: A substrate transfer module and the substrate processing system are provided to prevent the corrosion of component and particles. The loader module(14) is connected to the process module(11) and the loadlock module(12) performing the etching process on the wafer(W). The loader module comprises the substrate transfer device(16) returning the wafer and the transfer room(15) accommodating the substrate transfer device. The pressure of the transfer room is the atmospheric pressure. The substrate transfer device comprises the peak(19) supporting the wafer and the arm portion(20) moving the peak.
Abstract translation: 提供基板转印模块和基板处理系统以防止组分和颗粒的腐蚀。 装载机模块（14）连接到处理模块（11），负载锁模块（12）对晶片（W）进行蚀刻处理。 装载机模块包括返回晶片的基板传送装置（16）和容纳基板传送装置的传送室（15）。 转运室的压力是大气压力。 衬底传送装置包括支撑晶片的峰（19）和移动峰的臂部分（20）。
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Patent Agency Ranking
公开(公告)号：KR1020080107996A
公开(公告)日：2008-12-11
申请号：KR1020080041757
申请日：2008-05-06
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: H01J37/3244 , H01J37/32449
Abstract: An absorbing method and a storage medium are provided to decrease the time required for the vacuum suction without causing the fault based on the moisture. An absorbing method of the vacuum processing device including vacuum process room includes the following steps: the first pressure adjustment step which is the sub atmospheric pressure and maintains the pressure within the vacuum process room over 6.7Î102 Pa (5Torr) in the vacuum suction; the second pressure adjustment step which boosts up the pressure in the vacuum process room higher than the pressure of the first pressure adjustment step and lower than the pressure of the sub atmospheric pressure, following the first pressure adjustment step.
Abstract translation: 提供一种吸收方法和存储介质，以减少真空抽吸所需的时间，而不会导致基于湿气的故障。 包括真空处理室的真空处理装置的吸收方法包括以下步骤：作为次大气压的第一压力调节步骤，并且在真空处理室内保持在真空吸附过程中的最大吸力为6.7〜102Pa（5Torr）的压力; 所述第二压力调节步骤在所述第一压力调节步骤之后，将所述真空处理室中的压力升高到高于所述第一压力调节步骤的压力并且低于所述次大气压的压力。
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公开(公告)号：KR1020080019560A
公开(公告)日：2008-03-04
申请号：KR1020070085983
申请日：2007-08-27
Applicant: 도쿄엘렉트론가부시키가이샤
Inventor： 모리야츠요시
IPC: H01L21/304
Abstract: A cleaning apparatus and a cleaning method are provided to prevent a lowering effect in the quality of semiconductor devices by cleaning sufficiently components facing a narrow space within a substrate processing unit. A cleaning apparatus includes an injection unit and a suction unit. The injection unit injects a mixture of a material of a gas state and a material of a liquid state or a solid state to deposits(50). The suction unit sucks the injected mixture and the deposits. An injection port of the injection unit opens in a suction port of the suction unit. The cleaning apparatus further includes a pump to which the injection unit and the suction unit are connected. The pump includes a first impeller corresponding to the injection unit and a second impeller corresponding to the suction unit. The first impeller is disposed coaxially with the second impeller. A slope of each blade of the first impeller is opposite to a slope of each blade of the second impeller.
Abstract translation: 提供一种清洁装置和清洁方法，以通过清洁基板处理单元内面对狭窄空间的足够的部件来防止半导体器件的质量下降。 清洁装置包括注射单元和抽吸单元。 注射单元将气态物质和液态物质或固态物质的混合物注入沉积物（50）。 抽吸单元吸入注入的混合物和沉积物。 注射单元的注射口在抽吸单元的吸入口中打开。 清洁装置还包括连接有注射单元和抽吸单元的泵。 泵包括对应于注射单元的第一叶轮和对应于抽吸单元的第二叶轮。 第一叶轮与第二叶轮同轴配置。 第一叶轮的每个叶片的斜面与第二叶轮的每个叶片的斜面相反。
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公开(公告)号：KR1020070087495A
公开(公告)日：2007-08-28
申请号：KR1020070014540
申请日：2007-02-12
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/304 , H01L21/677
CPC classification number: H01L21/67196 , B08B5/023 , H01L21/67109 , H01L21/67742
Abstract: A substrate processing system, a substrate processing method, and a storage medium are provided to remove foreign materials from a substrate transferring unit by injecting high-temperature gas into the substrate transferring unit. A substrate processing system(1) includes at least a substrate processing unit(2) for processing a substrate and a substrate transferring unit(3) for transferring the substrate. A method for processing the substrate includes an injection process for injecting high-temperature gas into at least one of the substrate transferring unit and the substrate transferred by the substrate transferring unit. In the injection process, the high-temperature gas is injected into the substrate transferring unit before the substrate is transferred by the substrate transferring unit. In the substrate processing method, the high-temperature gas causes thermal stress on foreign matters attached to one of the substrate transferring unit and the substrate transferred by the substrate transferring unit.
Abstract translation: 提供基板处理系统，基板处理方法和存储介质，以通过将高温气体注入基板转印单元来从基板转印单元去除异物。 基板处理系统（1）至少包括用于处理基板的基板处理单元（2）和用于转移基板的基板传送单元（3）。 一种用于处理衬底的方法包括将高温气体注入到由衬底转移单元转移的衬底转移单元和衬底中的至少一个中的注入工艺。 在注射过程中，在衬底被衬底转移单元转移之前，将高温气体注入到衬底转移单元中。 在基板处理方法中，高温气体对附着到基板转印单元和由基板转印单元转印的基板的异物引起热应力。
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公开(公告)号：KR102244353B1
公开(公告)日：2021-04-23
申请号：KR1020200178706
申请日：2020-12-18
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01J37/32 , H01L21/67 , H01L21/02 , C23C16/455
Abstract: (과제) 동일한성막장치에있어서성막되는박막의막질을다양하게제어할수 있는기술을제공한다. (해결수단) 본개시의성막장치는, 진공배기가능한처리용기와, 하부전극과, 상부전극과, 가스공급부와, 전압인가부와, 전환부를구비한다. 하부전극에는, 처리용기내에서피처리기판이탑재된다. 상부전극은, 처리용기내에서하부전극에대향하여배치된다. 가스공급부는, 상부전극과하부전극의사이의처리공간에서플라즈마화하는성막원료가스를처리공간에공급한다. 전압인가부는, 고주파전원및 직류전원을갖고, 고주파전원및 직류전원중 적어도한쪽으로부터출력되는전압을상부전극에인가한다. 전환부는, 상부전극에인가되는전압을, 고주파전원으로부터출력되는고주파전압과, 직류전원으로부터출력되는직류전압과, 고주파전압에직류전압이중첩된중첩전압에서전환한다.
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公开(公告)号：KR1020170015210A
公开(公告)日：2017-02-08
申请号：KR1020160095918
申请日：2016-07-28
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/324 , H01L21/67 , H01L21/60 , H01L21/02 , G03F7/20
Abstract: [과제] 웨이퍼를가열처리함에있어서, 웨이퍼의처리에의해생기는승화물을분해하여, 승화물이배기로에부착되는것을억제하는것. 또한, 광원부로부터의광에의해웨이퍼(W)에대하여가열등의처리를행함에있어서, 광투과창에부착된승화물을제거하는것. [해결수단] 처리용기(2)의내면에열촉매층(5)을형성하여, 이열촉매층(5)을가열하고있다. 이때문에웨이퍼(W) 상의도포막으로부터승화하여처리용기(2) 내에받아들여진승화물이열촉매층(5) 근방에도달했을때에, 열촉매층(5)의열활성화에의해분해제거된다. 또한, 광투과창(42)에부착된승화물을제거함에있어서는, 표면에열촉매층(5)을형성한클리닝용기판(6)을처리용기(2) 내에반입하여, 열촉매층(5)을광투과창(42)에가깝게한 후, 클리닝용기판(6)을가열함으로써, 광투과창(42)의표면에부착된승화물(9)을제거한다.
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