公开(公告)号：KR100935257B1

公开(公告)日：2010-01-06

申请号：KR1020060021536

申请日：2006-03-08

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 주파오화 ,  하세베가즈히데

IPC: H01L21/205

CPC classification number: H01L21/02271 ,  C23C16/36 ,  C23C16/45523 ,  C23C16/45578 ,  C23C16/515 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/3144 ,  H01L21/3148 ,  H01L21/3185 ,  H01L21/76829

Abstract: 실란계 가스를 포함하는 제1 처리 가스와 질화 가스 또는 산질화 가스를 포함하는 제2 처리 가스와 탄화수소 가스를 포함하는 제3 처리 가스를 선택적으로 공급 가능한 처리 영역 내에서 피처리 기판 상에 CVD에 의해 절연막을 형성한다. 이 성막 방법은 제1 내지 제4 공정을 교대로 구비한다. 제1 공정에서는 처리 영역에 대한 제1 및 제3 처리 가스의 공급을 행하는 한편, 처리 영역에 대한 제2 처리 가스의 공급을 정지한다. 제2 공정에서는 처리 영역에 대한 제1, 제2, 및 제3 처리 가스의 공급을 정지한다. 제3 공정에서는 처리 영역에 대한 제2 처리 가스의 공급을 행하는 한편, 처리 영역에 대한 제1 및 제3 처리 가스의 공급을 정지한다. 제4 공정에서는 처리 영역에 대한 제1, 제2, 및 제3 처리 가스의 공급을 정지한다.
처리 용기, 매니폴드, 덮개체, 회전축, 승강 기구, 아암

公开(公告)号：KR1020090077873A

公开(公告)日：2009-07-16

申请号：KR1020090001745

申请日：2009-01-09

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하세베가즈히데 ,  노데라노부따께 ,  이은조

IPC: H01L21/205 ,  H01L21/31 ,  H01L21/00

CPC classification number: C23C16/345 ,  C23C16/45527 ,  C23C16/4554 ,  C23C16/45546 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: A film formation method and an apparatus for processing a semiconductor and a computer readable medium are provided to form a silicon nitride layer with high quality by suppressing generation of particles. A film formation apparatus(2) for processing a semiconductor includes a processing receptacle(4), a supporting member, a heater(86), an exhaust system(GE), a first processing gas supply system(28), a second processing gas supply system(30), an exciting unit, and a control unit(60). The processing receptacle has a processing region for receiving a processing substrate. The supporting member is used for supporting the processing substrate in the process region. The heater heats the processing substrate within the process region. The exhaust system exhausts the air of the process area. The first processing gas supply system supplies the first processing gas including silane-based gas to the process region. The second processing gas supply system supplies the second processing gas including the nitrogen gas to the processing region. The exciting unit performs an excitation process in the supplying process of the second processing gas. The control unit controls operations of the film formation apparatus.

Abstract translation: 提供了一种成膜方法和用于处理半导体和计算机可读介质的装置，通过抑制颗粒的产生而形成高质量的氮化硅层。 用于处理半导体的成膜装置（2）包括处理容器（4），支撑构件，加热器（86），排气系统（GE），第一处理气体供应系统（28），第二处理气体 供应系统（30），激励单元和控制单元（60）。 处理容器具有用于接收处理衬底的处理区域。 支撑构件用于在处理区域中支撑处理衬底。 加热器加热处理区域内的处理衬底。 排气系统排出处理区域的空气。 第一处理气体供给系统向处理区域提供包括硅烷类气体的第一处理气体。 第二处理气体供给系统将包含氮气的第二处理气体供给到处理区域。 励磁单元在第二处理气体的供给过程中进行激励处理。 控制单元控制成膜装置的操作。

公开(公告)号：KR1020090037341A

公开(公告)日：2009-04-15

申请号：KR1020080099371

申请日：2008-10-10

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 노데라노부따께 ,  사또오쥰 ,  야마모또가즈야 ,  하세베가즈히데

IPC: H01L21/205

CPC classification number: H01L21/3185 ,  C23C16/345 ,  C23C16/4405 ,  C23C16/45525

Abstract: An apparatus for forming a film for a semiconductor process is provided to prevent deterioration of a gas nozzle of a cleaning gas. An apparatus(1) for forming a film includes a reaction chamber(2) of a cylindrical shape having a ceiling. A plurality of wafers is loaded in a processing space(S) of the reaction chamber. An exhaust space is formed in one side of the reaction chamber. A partition(22) is arranged between the processing space and the exhaust space. A plurality of exhaust holes(3h) is formed according to a vertical direction of the partition. The processing space is connected to the exhaust space by the exhaust holes. A bottom part of a lowest exhaust hole is positioned on a position higher than a lowest level of a support level which supports the wafer of a wafer boat(6). A top part of a highest exhaust hole is positioned on a position lower than a highest level of the support level. A cover(5) is arranged on a bottom of the reaction chamber. The wafer boat has a plurality of support levels. A heater(7) is installed around the reaction chamber. A gas dispersion nozzle(8,9) and a gas nozzle(10) are connected to a processing gas supply part(GS) through a mass flow control.

Abstract translation: 提供一种用于形成用于半导体工艺的膜的装置，以防止清洁气体的气体喷嘴的劣化。 用于形成膜的装置（1）包括具有顶板的圆柱形的反应室（2）。 多个晶片装载在反应室的处理空间（S）中。 在反应室的一侧形成排气空间。 在处理空间与废气空间之间配置有隔板（22）。 根据隔板的垂直方向形成多个排气孔（3h）。 处理空间通过排气孔连接到排气空间。 最低排气孔的底部位于比支撑晶片舟皿（6）的晶片的支撑水平的最低水平高的位置上。 最高排气孔的顶部位于比支撑水平的最高水平低的位置。 盖（5）布置在反应室的底部。 晶片舟具有多个支撑水平。 加热器（7）安装在反应室周围。 气体分散喷嘴（8,9）和气体喷嘴（10）通过质量流量控制连接到处理气体供应部分（GS）。

公开(公告)号：KR1020090037340A

公开(公告)日：2009-04-15

申请号：KR1020080099370

申请日：2008-10-10

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 노데라노부따께 ,  사또오쥰 ,  마쯔나가마사노부 ,  하세베가즈히데

IPC: H01L21/3065

CPC classification number: H01L21/3185 ,  C23C16/345 ,  C23C16/4405 ,  C23C16/45519

Abstract: An apparatus for forming a film for a semiconductor process and a using method thereof are provided to improve yield of a semiconductor device by preventing generation of a particle due to an exfoliation of quartz and a by-product film. An apparatus(1) for forming a film includes a reaction tube(2) of a cylindrical shape. An exhaust pipe(3) for exhausting a gas is formed in a side of a bottom part of the reaction tube. An exhaust part(GE) is connected to the exhaust pipe through an exhaust tube(4). A pressure control unit is arranged on the exhaust part. A cover(5) is arranged on a bottom of the reaction tube, and is moved to top and bottom by a boat elevator. A wafer boat(6) is loaded on a top of the cover. A plurality of semiconductor wafers(W) is loaded in the wafer boat. A heater(7) composed of a resistance heating body is installed around the reaction tube. The heater is arranged inside an insulation cover(71). A gas dispersion nozzle(8,9) and a gas nozzle(16) are inserted in a bottom part of the reaction tube, and are connected to a processing gas supply part(GS) through a mass flow control. A plasma generating part(10) is arranged in one part of a side wall of the reaction tube.

Abstract translation: 提供一种用于形成半导体工艺的膜的设备及其使用方法，以通过防止由于石英和副产物膜的剥离而产生颗粒而提高半导体器件的产量。 用于形成膜的装置（1）包括圆柱形的反应管（2）。 用于排出气体的排气管（3）形成在反应管的底部的一侧。 排气部（GE）通过排气管（4）与排气管连接。 排气部设有压力控制单元。 在反应管的底部设置有盖（5），并通过船用电梯移动到顶部和底部。 晶片舟（6）装载在盖的顶部。 多个半导体晶片（W）装载在晶片舟皿中。 由电阻加热体构成的加热器（7）安装在反应管的周围。 加热器布置在绝缘盖（71）内。 将气体分散喷嘴（8,9）和气体喷嘴（16）插入反应管的底部，并通过质量流量控制与处理气体供给部（GS）连接。 等离子体产生部件（10）布置在反应管的侧壁的一部分中。

公开(公告)号：KR100887330B1

公开(公告)日：2009-03-06

申请号：KR1020057022905

申请日：2004-05-28

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 스가와라다쿠야 ,  다다요시히데 ,  나카무라겐지 ,  오자키시게노리 ,  나카니시도시오 ,  사사키마사루 ,  마츠야마세이지 ,  하세베가즈히데 ,  나카지마시게루 ,  후지와라도모노리

IPC: H01L21/316

CPC classification number: H01L21/02112 ,  H01L21/0234 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L29/518 ,  H01L29/78

Abstract: MOSFET의 게이트 절연막이나 메모리 디바이스에서의 용량의 전극간 절연막에 포함되는 탄소, 아산화물(suboxide), 댕글링 본드(dangling bond) 등에 기인하는 특성 열화를 개선하여, 절연막의 특성을 향상시키는 방법을 제공한다.
절연막에 희가스를 포함하는 처리 가스에 근거하는 플라즈마 처리와 열어닐 처리를 조합한 개질 처리를 실시한다.

公开(公告)号：KR1020090007263A

公开(公告)日：2009-01-16

申请号：KR1020080135449

申请日：2008-12-29

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하세베가즈히데 ,  오까다미쯔히로

IPC: H01L21/205

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/3185

Abstract: A silicon nitride film forming method is provided to nitrify the surface until most of Si-H combination of the surface of a silicon nitride film is changed into Si-N combination, thereby preventing generation of degassing even when exposing the silicon nitride film to atmosphere. A silicon nitride film is accumulated by CVD on a processed substrate within a process area(5) of a reaction container(2). Silane gas and ammonia gas are supplied to the process area for first time to be reacted to each other. The process area is set up with first temperature and first pressure. Thereafter, the process area is pursed while blocking supply of the silane gas and ammonia gas to the process area. Thereafter, the surface of the silicon nitride film is nitrified within the process area. The ammonia gas is supplied without supplying the silane gas to the process area for second time shorter than the first time. The process area is set up with second temperature and second pressure. While vacuum evacuation of the process area is continued, cycle purge is performed by repeating supply and pause of inactive gas in a pulse shape several times to the process area.

Abstract translation: 提供氮化硅膜形成方法以使表面硝化，直到氮化硅膜的表面的大部分Si-H组合变成Si-N组合，从而即使当将氮化硅膜暴露于大气时也可防止脱气的产生。 氮化硅膜通过CVD在反应容器（2）的处理区域（5）内的处理衬底上积累。 硅烷气体和氨气首次被供给到处理区域以进行反应。 过程区域设置有第一温度和第一压力。 此后，在阻挡向处理区域供应硅烷气体和氨气的同时追求处理区域。 此后，氮化硅膜的表面在处理区域内被硝化。 供给氨气而不向第一次供给第二次硅烷气体至处理区域。 过程区域设置有第二温度和第二压力。 在继续进行处理区域的真空排气的同时，通过重复向工艺区域重复供给和暂停非活性气体脉冲形状数倍的循环清洗。

公开(公告)号：KR1020080108912A

公开(公告)日：2008-12-16

申请号：KR1020080054102

申请日：2008-06-10

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 노데라노부따께 ,  마쯔나가마사노부 ,  하세베가즈히데 ,  우메자와고오따 ,  주파오화

IPC: H01L21/20

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45546 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3185

Abstract: A film formation method and an apparatus for a semiconductor process, and a computer readable medium are provided to suppress the generation of particle and form the silicon nitride film in which the thin film is excellent with the high deposition rate. A film formation method for a semiconductor process comprises the following processes. A plurality of cycles are performed within the process area(5) in which the processed substrate is arranged. The film forming process for the silicon nitride film which has the predetermined thickness by laminating the thin film is provided. Each cycle comprises the first supply process and the second supply process. The first supply process performs the supply of the first process gas about the process area. The first supply process maintains the cut off of the supply of the second process gas about the process area. The second supply process performs the supply of the second process gas about the process area. The second supply process maintains the cut off of the supply of the first process gas about the process area. The first cycle set and the second cycle set is repeated without the task which materially changes the fixing heating temperature about the process area to the mixed product.

Abstract translation: 提供一种成膜方法和半导体工艺装置以及计算机可读介质，以抑制颗粒的产生并形成其中薄膜以高沉积速率优异的氮化硅膜。 半导体工艺的成膜方法包括以下工序。 在其中布置经处理的基板的处理区域（5）内执行多个周期。 提供了通过层叠薄膜而具有预定厚度的氮化硅膜的成膜工艺。 每个循环包括第一个供应过程和第二个供应过程。 第一供应过程执行关于处理区域的第一工艺气体的供应。 第一供应过程维持关于处理区域的第二工艺气体的供应的切断。 第二供应过程执行关于处理区域的第二处理气体的供应。 第二供应过程维持关于处理区域的第一工艺气体的供应的切断。 重复第一循环组和第二循环组，而没有任何将对加工区域的定影加热温度实质上改变为混合产物的任务。

公开(公告)号：KR100860683B1

公开(公告)日：2008-09-26

申请号：KR1020040074054

申请日：2004-09-16

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하세베가즈히데 ,  다까하시유따까 ,  우메자와고오따 ,  다까기사또시 ,  오까다미쯔히로 ,  지바다까시 ,  오가와쥰

IPC: H01L21/318 ,  H01L21/205 ,  H01L21/324 ,  H01L21/336

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/45531 ,  C23C16/45546 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/3141 ,  H01L21/3185

Abstract: 본 발명의 과제는 불순물의 관통을 방지하는 것이 가능한 절연층을 형성할 수 있는 성막 방법을 제공하는 것이다.
표면에 SiO
2 막, 혹은 SiON막으로 이루어지는 베이스막이 형성되어 있는 복수매의 피처리체(W)에 성막을 실시하는 방법에 있어서, 복수매의 피처리체를 소정의 간격을 두고 다단으로 수용한 처리 용기 내에 디클로로실란, 헥사클로로디실란, 테트라클로로실란으로 이루어지는 군으로부터 선택되는 어느 하나의 원료 가스와 암모니아 가스를 교대로 복수회 반복해서 공급하여 낮은 프로세스 온도에서 베이스막 상에 얇은 실리콘 질화막을 적층하도록 성막한다. 이에 의해, 적층 실리콘 질화막의 막질이 개선되어 불순물의 관통을 대폭으로 억제한다.
베이스막, 적층 실리콘 질화막, CVD 절연층, 반도체 웨이퍼

公开(公告)号：KR1020080029846A

公开(公告)日：2008-04-03

申请号：KR1020070097409

申请日：2007-09-27

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하세베가즈히데 ,  이시다요시히로 ,  후지따다께히꼬 ,  오가와쥰 ,  나까지마시게루

IPC: H01L21/205

CPC classification number: C23C16/509 ,  C23C16/402 ,  C23C16/45542 ,  C23C16/45546 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

Abstract: A method and an apparatus for forming a silicon oxide film are provided to maintain a film formation rate and to form a silicon oxide layer of high quality at low temperature. A first process is performed to supply a first processing gas to a processing region, to stop a second processing gas supplied to the processing region, and to form an absorbing layer including silicon on a surface of a target substrate. A second process is performed to supply a second processing gas to the processing region, to stop the first processing gas supplied to the processing region, and to oxidize the absorbing layer formed on the surface of the target substrate. The first and second processes are performed repeatedly, in order to form an oxide layer having a predetermined thickness. The process temperature is lowered by using a univalent or bivalent aminosilane gas as the silicon source gas in comparison with a trivalent aminosilane gas.

Abstract translation: 提供一种形成氧化硅膜的方法和装置，以保持成膜速率并在低温下形成高品质的氧化硅层。 执行第一处理以向处理区域提供第一处理气体，以停止供应到处理区域的第二处理气体，并且在目标基板的表面上形成包括硅的吸收层。 执行第二处理以向处理区域供应第二处理气体，以停止供应到处理区域的第一处理气体，并且氧化形成在目标基板表面上的吸收层。 为了形成具有预定厚度的氧化物层，重复执行第一和第二工序。 与三价氨基硅烷气体相比，使用一价或二价氨基硅烷气体作为硅源气体，降低了工艺温度。

公开(公告)号：KR1020080020963A

公开(公告)日：2008-03-06

申请号：KR1020070088261

申请日：2007-08-31

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하세베가즈히데 ,  주파오-화 ,  우메자와고오따 ,  가도나가겐따로오 ,  장패리

IPC: H01L21/205

CPC classification number: C23C16/45525 ,  C03C17/225 ,  C03C2217/281 ,  C03C2217/282 ,  C03C2217/283 ,  C03C2218/152 ,  C23C16/30 ,  C23C16/45542 ,  C23C16/45546 ,  C23C16/45578

Abstract: A method for forming a layer for a semiconductor process is provided to form an insulation layer with a predetermined thickness by relatively reducing an etch rate in a cleaning process even if a layer is formed at a relatively low temperature. In a first process, first process gas and foregoing gas as one of third and fourth process gases with respect to a process region are supplied while second process gas and following gas as the other of the third and fourth process gases with respect to the process region stop their supply. While the following gas with respect to the process region is supplied, the supply of the foregoing gas and the second process gas with respect to the process region is stopped in a second process. While the second process gas with respect to the process region is supplied, the supply of the first process gas with respect to the process region is stopped in a third process. A cycle alternately including first, second and third processes is repeated several times so that thin films stacked by the cycle are stacked to form an insulation layer with a predetermined thickness. Each cycle can include an intervening process between the second and third processes so that the process region is exhausted while the supply of the first, second, third and fourth process gases with respect to the process region is stopped.

Abstract translation: 提供一种用于形成半导体工艺的层的方法，即使在相对低的温度下形成层，通过相对地减少清洁过程中的蚀刻速率来形成具有预定厚度的绝缘层。 在第一过程中，相对于处理区域，第一工艺气体和作为第三和第四工艺气体之一的前述气体相对于工艺区域被供给，而第二工艺气体和随后的气体作为第三和第四工艺气体中的另一个相对于工艺区域 停止供应 虽然提供了相对于处理区域的以下气体，但是在第二过程中停止了相对于处理区域的上述气体和第二工艺气体的供应。 当提供相对于处理区域的第二工艺气体时，在第三工序中停止相对于工艺区域的第一工艺气体的供给。 交替地包括第一，第二和第三工艺的循环重复几次，使得通过循环堆叠的薄膜被堆叠以形成具有预定厚度的绝缘层。 每个循环可以包括在第二和第三过程之间的中间过程，使得处理区域被耗尽，同时停止相对于处理区域的第一，第二，第三和第四工艺气体的供给。