公开(公告)号：JP2004193614A

公开(公告)日：2004-07-08

申请号：JP2003409522

申请日：2003-12-08

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CHUDZIK MICHAEL PATRICK ,  DENNARD ROBERT H ,  DIVAKARUNI RAMA ,  FURMAN BRUCE KENNETH ,  JAMMY RAJARAO ,  NARAYAN CHANDRASEKHAR ,  PURUSHOTHAMAN SAMPATH ,  SHEPARD JR JOSEPH F ,  TOPOL ANNA WANDA

IPC: H01L23/12 ,  H01L23/50 ,  H01L25/04 ,  H01L25/18 ,  H01L29/40 ,  H05K1/16 ,  H05K3/46

CPC classification number: H05K1/162 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/50 ,  H01L2224/16225 ,  H01L2924/01019 ,  H01L2924/01055 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/30105 ,  H05K1/167 ,  H05K3/4602 ,  H05K2201/09809

Abstract: PROBLEM TO BE SOLVED: To provide a structure for an integrated carrier equipped with high frequency and high speed passive components for computing. SOLUTION: A carrier 200 for a semiconductor component 102 is provided, which has passive components 3010 integrated in its substrate. The passive components 3010 include decoupling components, such as capacitors and resistors. A set of connections 210 is integrated in a close electrical proximity to the supported components. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2002319621A

公开(公告)日：2002-10-31

申请号：JP2002035811

申请日：2002-02-13

Applicant: IBM

Inventor： GATES STEPHEN MCCONNELL ,  HEDRICK JEFFREY CURTIS ,  NITTA SATYANARAYANA V ,  PURUSHOTHAMAN SAMPATH ,  TYBERG CRISTY SENSENICH

IPC: H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide an interconnecting structure containing patterned multilayered spun-on dielectrics, and to provide a method of forming the structure. SOLUTION: The interconnecting structure contains the patterned multilayered spun-on dielectrics 12' formed on the surface of a substrate. The dielectrics 12 are constituted of a lower low-k dielectrics 14', an embedded etch stop layer 16', and an upper low-k dielectric 18'. The dielectrics 14' and 18' have a first composition and the layer 16' has a second composition which is different from the first composition and is covalently coupled with the dielectrics 14' and 18'. The mutual connecting structure also contains a polish stop layer 22' formed on the multilayered spun-on dielectrics 12' and a metal conductive region 34 formed in the dielectrics 12'.

公开(公告)号：JP2001284453A

公开(公告)日：2001-10-12

申请号：JP2001033861

申请日：2001-02-09

Applicant: IBM

Inventor： JUDETH M RUBINO ,  JAHNES CHRISTOPHER ,  LINIGER ERIC G ,  RYAN JAMES G ,  CARLOS J SANBUSETEI ,  CARDONE FRANK ,  PURUSHOTHAMAN SAMPATH ,  PHIZHIMONS JOHN A ,  STEVEN M GATES

IPC: C22F1/10 ,  C22C19/00 ,  C22F1/00 ,  H01L21/28 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/76 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a low dielectric barrier with a superior diffusion characteristic for copper and adhesion, on a copper conductor. SOLUTION: A method comprises; 1) preparing a substrate having a copper conductor, 2) putting a metal alloy film including phosphor or boron as a protective layer, on the copper conductor, 3) carrying out the first annealing process to diffuse a metal alloy including phosphor or boron into 2-4 atom layers at least, on the top of the copper conductor, then 4) putting a dielectric film with low dielectric constant on the metal alloy film including phosphor or boron, and 5) carrying out the second annealing process. The obtained structure has a double layer barrier which includes the metal alloy film including phosphor or boron on the copper conductor and the dielectric material film on the metal alloy film, and shows superior barrier and adhesive characteristics for the copper conductor.

公开(公告)号：JPH11271958A

公开(公告)日：1999-10-08

申请号：JP2580699

申请日：1999-02-03

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレイション

Inventor： WILLIAM JOHN ADAIR ,  CATHERINE E BAYVICH ,  ALESSANDRO CESARE CAREGARI ,  WAREIS RAY CARPENTER ,  SCOTT MARSHALL MANSFIELD ,  PURUSHOTHAMAN SAMPATH

IPC: G03F1/58 ,  H01L21/027 ,  G03F1/08

CPC classification number: G03F1/32

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a high-resolution photomask by decreasing the fluctuations in the critical dimensions(CD). SOLUTION: The decrease of the fluctuations in the CD may be embodied by using a thin conductive transfer layer 13 which may be patterned by electron beam lithography and dry or wet etching. The patterns are transferred to a lower layer film 12 by reactive ion etching. The lower layer film may be made opaque or partially transparent at 365, 248 and 193 nm. The thin conductive transfer layer 13 is formed of, for example, a thin Cr film and the opaque or partially transparent material may be formed of a carbon film, silicide metal or silicide oxy-nitride film.

Abstract translation: 要解决的问题：提供通过减小临界尺寸（CD）的波动来形成高分辨率光掩模的方法。 解决方案：CD中的波动的减小可以通过使用可以通过电子束光刻和干法或湿蚀刻图案化的薄导电转移层13来体现。 通过反应离子蚀刻将图案转移到下层膜12。 下层膜可以在365,248和193nm下制成不透明或部分透明的。 薄导电转印层13由例如薄的Cr膜形成，并且不透明或部分透明的材料可以由碳膜，硅化金属或硅化物氮化物膜形成。

公开(公告)号：JPH1145618A

公开(公告)日：1999-02-16

申请号：JP16024698

申请日：1998-06-09

Applicant: IBM

Inventor： GELORME JEFFREY D ,  SANG WON KANG ,  PURUSHOTHAMAN SAMPATH

IPC: C08L71/12 ,  H01B1/00 ,  H01B1/22 ,  H01R11/01 ,  H05K1/09 ,  H05K3/32

Abstract: PROBLEM TO BE SOLVED: To provide a conductive paste material that is environmentally safe and inexpensive, and that provides higher conductivity than an existing silver fill-up epoxy. SOLUTION: This conductive paste structure comprises a polymer material, a conductive film 32, e.g. a particle having tin or a mixture with copper. Films of adjacent particles are heated each other to be fused. A polymer material is styrene allylalcohol resin or thermoplastic phenoxy polymer. This structure is provided between two conductive surfaces, e.g. between a chip pad and a substrate pad, to give a mutual electric connection and mechanical adhesion.

公开(公告)号：AT436088T

公开(公告)日：2009-07-15

申请号：AT02731605

申请日：2002-04-30

Applicant: IBM

Inventor： GATES STEPHEN ,  MURRAY CHRISTOPHER ,  NITTA SATYANARAYANA ,  PURUSHOTHAMAN SAMPATH

IPC: H01L21/316 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

公开(公告)号：CA2472750C

公开(公告)日：2009-02-03

申请号：CA2472750

申请日：2002-12-19

Applicant: IBM

Inventor： VOLANT RICHARD PAUL ,  SAMBUCETTI CARLOS JUAN ,  PURUSHOTHAMAN SAMPATH ,  PETRARCA KEVIN SHAWN ,  WALKER GEORGE FREDERICK ,  MAGERLEIN JOHN HAROLD

IPC: H01L21/60 ,  H01L21/00 ,  H01L23/485 ,  H01L23/498 ,  H05K1/03 ,  H05K1/11 ,  H05K3/34 ,  H05K3/38

Abstract: A system for interconnecting a set of device chips by means of an array of microjoints disposed on an interconnect carrier is taught. The carrier is provided with a dense array of microjoint receptacles with an adhesion layer , barrier layer and a noble metal layer; the device wafers are fabricated with an array of microjoining pads comprising an adhesion layer, barrier layer an d a fusible solder layer with pads being located at matching locations in reference to the barrier receptacles; said device chips are joined to said carrier through the microjoint arrays resulting in interconnections capable of very high input/output density and inter-chip wiring density.

公开(公告)号：GB2366874A

公开(公告)日：2002-03-20

申请号：GB0110320

申请日：2001-04-27

Applicant: IBM

Inventor： BUCHWALTER STEPHEN ,  DIMITRAKOPOULOS CHRISTOS DIMIT ,  LEE KANG-WOOK ,  LIEN SHUI-CHIH ALAN ,  PURUSHOTHAMAN SAMPATH

IPC: G02F1/1337 ,  G02F1/1343

Abstract: In the invention, the technology of the formation of self assembled monolayers is employed in imparting vertical alignment and domain favoring features in homeotropic pixel elements in the technology of liquid crystal type displays. Substituted silane compounds, such as octadecylsilane when applied on a transparent conductive layer surface such as that of indium tin oxide in a hydrolyzable alcohol solution, and then followed by a baking temperature cycle, form essentially single thickness molecule layers (monolayers) of molecules that are bonded at one end to the indium tin oxide surface and have the other end of the molecule operable to influence molecular orientation and domain preference of a liquid crystal.

公开(公告)号：SG33468A1

公开(公告)日：1996-10-18

申请号：SG1995001167

申请日：1995-08-21

Applicant: IBM

Inventor： KANG SUNG K ,  GRAHAM TERESITA O ,  PURUSHOTHAMAN SAMPATH ,  ROLDAN JUDITH MARIE ,  SARAF RAVI F

IPC: H01R4/02 ,  H05K3/34 ,  H05K3/42

公开(公告)号：DE69304503D1

公开(公告)日：1996-10-10

申请号：DE69304503

申请日：1993-12-13

Applicant: IBM

Inventor： BAILEY FREDERIC DENIS ,  BUCHANAN DOUGLAS ANDREW ,  CALLEGARI ALESSANDRO CESARE ,  CLEARFIELD HOWARD MARC ,  DOANY FUAD ELIAS ,  FLAGELLO DONIS GEORGE ,  HOVEL HAROLD JOHN ,  LATULIPE DOUGLAS CHARLES ,  LUSTIG NAFTALI ELIAHU ,  POMERENE ANDREW THOMAS STEWART ,  PURUSHOTHAMAN SAMPATH ,  SCHERPEREEL CHRISTOPHER MICHAE ,  SEEGER DAVID EARLE ,  SHAW JANE MARGARET

IPC: G03F1/08 ,  C01B31/06 ,  C08J7/06 ,  C23C8/26 ,  C23C8/50 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C30B29/04 ,  G02B1/10 ,  G11B5/255 ,  H01L21/31 ,  H01L21/314

Abstract: The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond-like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.