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公开(公告)号：US09728372B2
公开(公告)日：2017-08-08
申请号：US15053225
申请日：2016-02-25
Applicant: JEOL Ltd.
Inventor： Yuji Kohno
CPC classification number: H01J37/222 , H01J37/28 , H01J2237/24455 , H01J2237/24465 , H01J2237/2802 , H01J2237/2803
Abstract: A measurement method capable of easily measuring the directions of detector segments of a segmented detector relative to a scanning transmission electron microscope (STEM) image is provided. The measurement method is for use in an electron microscope equipped with the segmented detector having a detection surface divided into the detector segments. The measurement method is used to measure the directions of the detector segments relative to the STEM image. The method involves defocusing the STEM image to thereby cause a deviation of the STEM image and measuring the directions of the detector segments relative to the STEM image from the direction of the deviation of the STEM image (step S11).
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公开(公告)号：US20170162363A1
公开(公告)日：2017-06-08
申请号：US15286678
申请日：2016-10-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： JIN KWAN KIM , MIN KOOK KIM , JUNG SOO KIM , YU SIN YANG , CHUNG SAM JUN
CPC classification number: H01J37/222 , G01N23/2251 , G01N2223/418 , G01N2223/423 , H01J37/244 , H01J37/28 , H01J2237/0473 , H01J2237/226 , H01J2237/24485 , H01J2237/2803 , H01J2237/2804 , H01J2237/2805 , H01J2237/2806
Abstract: A structure analysis method using a scanning electron microscope includes irradiating a sample with an electron beam having a first landing energy to obtain a first image at a first depth of the sample and accelerating the electron beam to have a second landing energy higher than the first landing energy to obtain a second image at a second depth of the sample.
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公开(公告)号：US20170133196A1
公开(公告)日：2017-05-11
申请号：US15258025
申请日：2016-09-07
Applicant: JEOL Ltd.
Inventor： Kazuya Yamazaki
IPC: H01J37/22 , H01J37/147 , H01J37/28 , H01J37/10
CPC classification number: H01J37/226 , H01J37/10 , H01J37/147 , H01J37/268 , H01J37/28 , H01J2237/221 , H01J2237/2614 , H01J2237/2802 , H01J2237/2803
Abstract: There is provided a charged particle system capable of measuring deflection fields in a sample without using a segmented detector. The charged particle system (100) has: illumination optics (104) for illuminating the sample with charged particles; an imaging deflector system (112) disposed behind an objective lens (110) and operative to deflect the charged particles; a detector (116) having a detection surface (115) and operative to detect the charged particles incident thereon, imaging optics (114) disposed behind the imaging deflector system (112) and operative to focus the charged particles as diffraction discs (2) onto the detection surface (115); a storage unit (120) for storing intensity information detected by the detector (116); and a controller (130) for controlling the imaging deflector system (112). The controller (130) controls the imaging deflector system (112) to cause the charged particles passing through a given position of particle impingement on the sample to be deflected under successively different sets of deflection conditions and to bring the diffraction discs (2) into focus onto successively different regions of the detection surface (115). The storage unit (120) stores the intensity information for each set of the deflection conditions.
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公开(公告)号：US09529040B2
公开(公告)日：2016-12-27
申请号：US14811549
申请日：2015-07-28
Applicant: TECHINSIGHTS INC.
Inventor： Christopher Pawlowicz , Alexander Sorkin , Alexander Krechmer
IPC: G21G5/00 , G01R31/303 , G01R31/28 , G01N23/225 , H01L21/66
CPC classification number: G01R31/303 , G01N23/2255 , G01R31/2896 , H01J2237/24564 , H01J2237/24585 , H01J2237/2803 , H01J2237/2809 , H01J2237/31749 , H01L22/12
Abstract: Described are various embodiments of methods and systems for tracing circuitry on integrated circuits using focused ion beam based imaging techniques. In one such embodiment, a method is provide for identifying functional componentry associated with a switchable power interface on an integrated circuit, wherein the switchable power interface comprises a source and a drain with a control switch therebetween, said control switch being controllable by a control signal during operation of the integrated circuit. The method comprises connecting, with deposited conductive material, the source and the drain; applying an external voltage bias to a power input of the switchable power interface via one of the source and the drain; exposing the integrated circuit to a focused ion beam; and gathering an image of the integrated circuit during exposure to determine areas of high contrast indicating functional componentry in operative connection with the switchable power interface.
Abstract translation: 描述了使用基于聚焦离子束的成像技术在集成电路上跟踪电路的方法和系统的各种实施例。 在一个这样的实施例中，提供了一种用于识别与集成电路上的可切换电力接口相关联的功能组件的方法，其中所述可切换电力接口包括其间具有控制开关的源极和漏极，所述控制开关由控制信号 在集成电路运行期间。 该方法包括用沉积的导电材料连接源极和漏极; 通过源极和漏极中的一个将外部电压施加到可切换电力接口的功率输入; 将集成电路暴露于聚焦离子束; 以及在曝光期间收集集成电路的图像，以确定与可切换电源接口可操作连接的功能组件的高对比度区域。
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公开(公告)号：US09508521B2
公开(公告)日：2016-11-29
申请号：US14328754
申请日：2014-07-11
Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
Inventor： Hiroyasu Shichi , Shinichi Matsubara , Norihide Saho , Masahiro Yamaoka , Noriaki Arai
CPC classification number: H01J27/26 , H01J27/022 , H01J37/023 , H01J37/067 , H01J37/08 , H01J37/26 , H01J37/28 , H01J2237/002 , H01J2237/006 , H01J2237/061 , H01J2237/0807 , H01J2237/2803
Abstract: An ion beam device according to the present invention includes a gas field ion source (1) including an emitter tip (21) supported by an emitter base mount (64), a ionization chamber (15) including an extraction electrode (24) and being configured to surround the emitter tip (21), and a gas supply tube (25). A center axis line of the extraction electrode (24) overlaps or is parallel to a center axis line (14A) of the ion irradiation light system, and a center axis line (66) passing the emitter tip (21) and the emitter base mount (64) is inclinable with respect to a center axis line of the ionization chamber (15). Accordingly, an ion beam device including a gas field ion source capable of adjusting the direction of the emitter tip is provided.
Abstract translation: 根据本发明的离子束装置包括气体离子源（1），其包括由发射极基座（64）支撑的发射极尖端（21），包括引出电极（24）的电离室（15） 构造成围绕发射器尖端（21），以及气体供应管（25）。 引出电极（24）的中心轴线与离子照射光系统的中心轴线（14A）重叠或平行，通过发射极尖端（21）和发射极基座 （64）相对于所述电离室（15）的中心轴线是可倾斜的。 因此，提供了包括能够调节发射极尖端的方向的气体场离子源的离子束装置。
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Patent Agency Ranking
公开(公告)号：US09177757B2
公开(公告)日：2015-11-03
申请号：US14417647
申请日：2013-06-21
Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
Inventor： Naoma Ban , Kenji Obara , Takehiro Hirai
CPC classification number: H01J37/222 , H01J37/04 , H01J37/261 , H01J2237/049 , H01J2237/063 , H01J2237/221 , H01J2237/2448 , H01J2237/24585 , H01J2237/24592 , H01J2237/2602 , H01J2237/2803 , H01J2237/2817 , H01L22/12 , H01L2924/0002 , H01L2924/00
Abstract: The present invention relates to a defect inspection apparatus based on the fact that contrasts of a grain and a void of a semiconductor copper interconnect in a scanning electron microscope are changed depending on electron beam irradiation accelerating voltages. A charged particle beam apparatus of the present invention irradiates the same portion of a specimen with electron beams at a plurality of accelerating voltages, and differentiates a grain (65, 66) from a void (67) on the basis of a contrast change amount of the same portion in a plurality of images (61, 62) acquired so as to respectively correspond to the plurality of accelerating voltages. Consequently, it is possible to automatically detect a grain and a void in a differentiation manner at a high speed without destructing a specimen.
Abstract translation: 本发明涉及一种基于电子束照射加速电压改变扫描电子显微镜中的晶粒与半导体铜互连空隙的对比度的缺陷检查装置。 本发明的带电粒子束装置以多个加速电压照射具有电子束的样本的相同部分，并且基于对比度的变化量来区分晶粒（65,66）与空隙（67）的距离 获取的多个图像（61,62）中的相同部分分别对应于多个加速电压。 因此，可以以高速自动检测纹理和空白，而不会破坏样本。
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公开(公告)号：US20150170875A1
公开(公告)日：2015-06-18
申请号：US14417647
申请日：2013-06-21
Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
Inventor： Naoma Ban , Kenji Obara , Takehiro Hirai
CPC classification number: H01J37/222 , H01J37/04 , H01J37/261 , H01J2237/049 , H01J2237/063 , H01J2237/221 , H01J2237/2448 , H01J2237/24585 , H01J2237/24592 , H01J2237/2602 , H01J2237/2803 , H01J2237/2817 , H01L22/12 , H01L2924/0002 , H01L2924/00
Abstract: The present invention relates to a defect inspection apparatus based on the fact that contrasts of a grain and a void of a semiconductor copper interconnect in a scanning electron microscope are changed depending on electron beam irradiation accelerating voltages. A charged particle beam apparatus of the present invention irradiates the same portion of a specimen with electron beams at a plurality of accelerating voltages, and differentiates a grain (65, 66) from a void (67) on the basis of a contrast change amount of the same portion in a plurality of images (61, 62) acquired so as to respectively correspond to the plurality of accelerating voltages. Consequently, it is possible to automatically detect a grain and a void in a differentiation manner at a high speed without destructing a specimen.
Abstract translation: 本发明涉及一种基于电子束照射加速电压改变扫描电子显微镜中的晶粒与半导体铜互连空隙的对比度的缺陷检查装置。 本发明的带电粒子束装置以多个加速电压照射具有电子束的样本的相同部分，并且基于对比度的变化量来区分晶粒（65,66）与空隙（67）的距离 获取的多个图像（61,62）中的相同部分分别对应于多个加速电压。 因此，可以以高速自动检测纹理和空白，而不会破坏样本。
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48.发明授权公开(公告)号：US09000370B2
公开(公告)日：2015-04-07
申请号：US14512672
申请日：2014-10-13
Applicant: Hermes Microvision Inc.
Inventor： Weiming Ren , Zhongwei Chen
CPC classification number: H01J37/026 , H01J37/14 , H01J37/261 , H01J37/28 , H01J2237/0045 , H01J2237/0262 , H01J2237/1405 , H01J2237/2801 , H01J2237/2803
Abstract: The present invention provides means and corresponding embodiments to control charge-up in an electron beam apparatus, which can eliminate the positive charges soon after being generated on the sample surface within a frame cycle of imaging scanning. The means are to let some or all of secondary electrons emitted from the sample surface return back to neutralize positive charges built up thereon so as to reach a charge balance within a limited time period. The embodiments use control electrodes to generate retarding fields to reflect some of secondary electrons with low kinetic energies back to the sample surface.
Abstract translation: 本发明提供了用于控制电子束装置中的充电的装置和相应的实施例，其可以在成像扫描的帧周期内在样品表面上产生后不久就消除正电荷。 该方法是使从样品表面发射的二次电子的一些或全部返回到中和积聚在其上的正电荷，从而在有限的时间段内达到电荷平衡。 这些实施例使用控制电极产生延迟场，以将具有低动能的一些二次电子反射回样品表面。
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公开(公告)号：US20150076339A1
公开(公告)日：2015-03-19
申请号：US14483204
申请日：2014-09-11
Applicant: Georgia Tech Research Corporation
Inventor： Andrei G. Fedorov , Peter Arthur Kottke
CPC classification number: H01J49/0431 , H01J37/28 , H01J49/0004 , H01J2237/05 , H01J2237/2803 , H01J2237/2809 , H01J2237/285
Abstract: SMS probe imaging systems, methods of use thereof, and the like are disclosed. Embodiments of the present disclosure can use direct interrogation of objects (e.g., cells or tissue) within a small pool/droplet of liquid, optional thermal, mechanical, electrical, optical and chemical manipulation, followed immediately by liquid sampling, optional sample conditioning, and soft ionization of biomolecules.
Abstract translation: 公开了SMS探针成像系统及其使用方法等。 本公开的实施例可以使用在小池/液滴中的物体（例如，细胞或组织）的直接询问，可选的热，机械，电学，光学和化学操作，随后通过液体取样，可选的样品调节和 生物分子的软电离。
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公开(公告)号：US08790863B2
公开(公告)日：2014-07-29
申请号：US13881504
申请日：2011-10-26
Applicant: Daniel Branton , Anpan Han , Jene A. Golovchenko
Inventor： Daniel Branton , Anpan Han , Jene A. Golovchenko
CPC classification number: G03F7/2059 , B81C1/00531 , B81C2201/0143 , B81C2201/0159 , B82Y10/00 , B82Y40/00 , G01N23/2251 , H01J37/3174 , H01J2237/004 , H01J2237/022 , H01J2237/2002 , H01J2237/2803 , H01J2237/2809 , H01J2237/31796 , H01L21/0331 , H01L22/12 , H01L51/0014 , H01L51/0048
Abstract: In a method for imaging a solid state substrate, a vapor is condensed to an amorphous solid water condensate layer on a surface of a solid state substrate. Then an image of at least a portion of the substrate surface is produced by scanning an electron beam along the substrate surface through the water condensate layer. The water condensate layer integrity is maintained during electron beam scanning to prevent electron-beam contamination from reaching the substrate during electron beam scanning. Then one or more regions of the layer can be locally removed by directing an electron beam at the regions. A material layer can be deposited on top of the water condensate layer and any substrate surface exposed at the one or more regions, and the water condensate layer and regions of the material layer on top of the layer can be removed, leaving a patterned material layer on the substrate.
Abstract translation: 在固态基板成像方法中，将蒸气冷凝成固态基板表面的无定形固体水凝结物层。 然后通过沿着衬底表面扫描电子束通过水凝结层产生衬底表面的至少一部分的图像。 在电子束扫描期间维持水凝结层的完整性，以防止电子束扫描期间电子束污染到达衬底。 然后可以通过在该区域处引导电子束来局部地去除该层的一个或多个区域。 材料层可以沉积在水冷凝物层的顶部和在一个或多个区域暴露的任何基底表面，并且水凝结物层和该层顶部上的材料层的区域可以被去除，留下图案化的材料层 在基板上。
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