Abstract:
PROBLEM TO BE SOLVED: To provide a immersion-type lithography projection apparatus. SOLUTION: In the immersion-type lithography apparatus, an immersion liquid is confined between a final element of a projection system and a substrate. Both of hydrophobic and hydrophilic layers are used on various elements of the apparatus. The use of them helps to prevent air-bubble formation in the immersion liquid, and reduce residues remained on the elements after immersion in the immersion liquid. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a lithography projection apparatus and a device manufacturing method capable of compensating for or improving the effect of a thick pellicle. SOLUTION: The thick pellicle is characterized for calculating a correction to be applied in exposure so that the hick pellicle is allowed to have a non-flat shape and the shape compensates for the optical effect of the pellicle. As the pellicle readily compensates for, it can be mounted in such a manner as to employ a one-dimensional shape under the influence of gravity. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
A lithographic apparatus comprising: an illumination system (IL) configured to condition a radiation beam (PB); a support (MT) constructed to support a patterning device (MA), the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table (WT) constructed to hold a substrate (W); a projection system (PL) configured to project the patterned radiation beam onto a target portion of the substrate; a liquid supply system (130) configured to at least partly fill a space (25) between a final element of said projection system and said substrate with liquid; a seal member (12) arranged substantially to contain said liquid within said space between said final element of the projection system and said substrate; and elements (30,50,60,120,140) to control and/or compensate for evaporation of immersion liquid from said substrate.