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公开(公告)号:CN102437130B
公开(公告)日:2016-08-03
申请号:CN201110375028.X
申请日:2007-11-20
Applicant: 株式会社日立制作所
CPC classification number: H01L23/49582 , B23K20/02 , B23K20/04 , B23K35/0238 , B32B15/017 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/743 , H01L24/83 , H01L2224/291 , H01L2224/29111 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2224/83455 , H01L2224/83801 , H01L2224/83805 , H01L2924/00014 , H01L2924/01006 , H01L2924/01009 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/351 , Y10T428/12736 , Y10T428/31678 , H01L2924/01014 , H01L2924/00 , H01L2924/00012 , H01L2924/01083 , H01L2924/3512 , H01L2224/45099 , H01L2224/05599
Abstract: 本发明提供一种半导体装置及其制造方法,该半导体装置具有第一部件、第二部件以及将所述第一部件和所述第二部件接合的连接材料。所述连接材料具有:Al系层、在所述Al系层和所述第一部件之间设置的第一Zn-Al系层以及在所述Al系层和所述第二部件之间设置的第二Zn-Al系层。通过使用该连接材料,在连接时能够抑制连接材料的表面的Al氧化膜的形成,能够得到用Zn-Al合金不能得到的良好的浸润性。另外,在接合后存留有Al系合金层的场合,由于柔软的Al作为应力缓冲材料发挥功能,所以能够得到很高的接合可靠性。
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公开(公告)号:CN102347298B
公开(公告)日:2016-08-03
申请号:CN201010569645.9
申请日:2010-11-24
Applicant: 台湾积体电路制造股份有限公司
IPC: H01L23/485 , H01L21/60
CPC classification number: H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/0345 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05572 , H01L2224/05647 , H01L2224/10145 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/1147 , H01L2224/11827 , H01L2224/13006 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13647 , H01L2224/16225 , H01L2224/16227 , H01L2224/16507 , H01L2224/81191 , H01L2224/81815 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/3651 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/05 , H01L2924/00012 , H01L2924/01083 , H01L2924/00 , H01L2224/05552
Abstract: 本发明公开了一种基板上的凸块结构与其形成方法,可解决基板上导电层与连接至导电层的金属凸块两者界面的分层问题。导电层可为金属垫或顶金属层。经由临场沉积导电保护层于导电层(或导电底层上),金属凸块的凸块下冶金层与导电层之间具有良好粘着力,并可减少界面分层。在某些实施例中,可省略凸块下冶金层中的铜扩散阻挡层。在某些实施例中,若金属凸块结构的沉积方法为非电镀工艺且金属凸块的组成不是铜,则可省略凸块下金属层。
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公开(公告)号:CN105590900A
公开(公告)日:2016-05-18
申请号:CN201510831260.8
申请日:2010-11-10
Applicant: 台湾积体电路制造股份有限公司
IPC: H01L23/00 , H01L23/498 , H01L25/00 , H01L25/065
CPC classification number: H01L25/0657 , H01L21/486 , H01L23/3114 , H01L23/3192 , H01L23/49811 , H01L23/49827 , H01L23/49838 , H01L23/5384 , H01L24/03 , H01L24/05 , H01L24/09 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/73 , H01L24/81 , H01L25/0655 , H01L25/50 , H01L2224/0345 , H01L2224/03452 , H01L2224/0381 , H01L2224/03831 , H01L2224/0401 , H01L2224/0557 , H01L2224/05572 , H01L2224/05647 , H01L2224/05666 , H01L2224/05681 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/11472 , H01L2224/1162 , H01L2224/11622 , H01L2224/1181 , H01L2224/11849 , H01L2224/11903 , H01L2224/13016 , H01L2224/13025 , H01L2224/13084 , H01L2224/13111 , H01L2224/13116 , H01L2224/13139 , H01L2224/13144 , H01L2224/13155 , H01L2224/13169 , H01L2224/1354 , H01L2224/1403 , H01L2224/14181 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/73204 , H01L2224/81193 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06548 , H01L2225/06568 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15788 , H01L2224/05552 , H01L2924/00
Abstract: 本发明包括一种半导体装置及其制造方法,该半导体装置包括:一第一基材,具有一第一内连线结构;以及一第二基材,具有一第二内连线结构,该第一内连线结构连接该第二内连线结构,该第一内连线结构的第一宽度与该第二内连线结构的第二宽度不同。本发明提供一种用于使一基材与另一基材接合的凸块结构。一导电柱体形成于第一基材上,以使此导电柱体具有与一第二基材的接触表面不同的宽度。在一实施例中,第一基材的导电柱体为梯形或具有锥形侧壁,因而提供底部部分较顶部部分宽的导电柱体。所述基材均可为集成电路芯片、转接板、印刷电路板、高密度内连线或其类似物。本发明可减低关于交界处应力所产生的脱层问题。
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公开(公告)号:CN102959708B
公开(公告)日:2016-05-04
申请号:CN201180032811.4
申请日:2011-06-29
Applicant: 柯立芝照明有限公司
IPC: H01L29/02 , H01L23/488 , H01L29/40
CPC classification number: F21K9/66 , F21K9/20 , F21K9/275 , F21K9/278 , F21K9/64 , F21K9/65 , F21V3/02 , F21V9/30 , F21V23/003 , F21V23/02 , F21V29/74 , F21Y2115/10 , G02F1/133603 , H01L23/367 , H01L23/4985 , H01L23/5387 , H01L24/32 , H01L24/83 , H01L25/0753 , H01L27/156 , H01L31/0468 , H01L33/0025 , H01L33/06 , H01L33/08 , H01L33/28 , H01L33/30 , H01L33/32 , H01L33/36 , H01L33/483 , H01L33/486 , H01L33/502 , H01L33/505 , H01L33/58 , H01L33/60 , H01L33/62 , H01L51/0097 , H01L2224/06102 , H01L2224/16225 , H01L2224/2929 , H01L2224/32225 , H01L2224/73204 , H01L2224/83385 , H01L2224/83851 , H01L2225/107 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01058 , H01L2924/01063 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/07811 , H01L2924/10253 , H01L2924/10321 , H01L2924/10322 , H01L2924/10323 , H01L2924/10324 , H01L2924/10328 , H01L2924/10329 , H01L2924/1033 , H01L2924/10331 , H01L2924/10332 , H01L2924/10333 , H01L2924/10334 , H01L2924/10335 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/15787 , H01L2924/381 , H02S30/00 , H05B33/0854 , H05B37/0218 , H05B37/0227 , H05B37/0245 , H05K1/189 , H05K3/323 , H05K2201/09036 , H05K2201/10106 , H05K2203/302 , H01L2924/01015 , H01L2924/01031 , H01L2924/01051 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
Abstract: 根据特定实施例,利用压力激活的粘合剂将半导体芯片直接粘合至易弯曲基板,尽管半导体芯片的表面具有任意非平面性或半导体芯片触点非共面。
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公开(公告)号:CN105390473A
公开(公告)日:2016-03-09
申请号:CN201510711114.1
申请日:2010-08-17
Applicant: 台湾积体电路制造股份有限公司
IPC: H01L23/498 , H01L21/48
CPC classification number: H01L21/76885 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/023 , H01L2224/0345 , H01L2224/0361 , H01L2224/03614 , H01L2224/03901 , H01L2224/03912 , H01L2224/0401 , H01L2224/05016 , H01L2224/05024 , H01L2224/05073 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05578 , H01L2224/05647 , H01L2224/0569 , H01L2224/10126 , H01L2224/1132 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11614 , H01L2224/1182 , H01L2224/11827 , H01L2224/11849 , H01L2224/11901 , H01L2224/11912 , H01L2224/13099 , H01L2224/13147 , H01L2224/13561 , H01L2224/13562 , H01L2224/13564 , H01L2224/13565 , H01L2224/13582 , H01L2224/13583 , H01L2224/13609 , H01L2224/13611 , H01L2224/13639 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13664 , H01L2224/1369 , H01L2224/16238 , H01L2224/81024 , H01L2224/81191 , H01L2224/814 , H01L2224/81411 , H01L2224/81413 , H01L2224/81416 , H01L2224/81439 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/206 , H01L2924/2064 , H01L2924/20641 , H01L2924/20642 , H01L2924/01028 , H01L2924/01022 , H01L2924/01046 , H01L2924/01083 , H01L2924/01051 , H01L2924/00
Abstract: 本申请公开了一种及封装组件,该集成电路装置包括:一半导体基板;一第一凸块底金属层,形成于该半导体基板之上;一第二凸块底金属层,形成于该第一凸块底金属层之上,具有一侧面;一导电柱,形成于该第二凸块底金属层之上,具有一侧面与一顶面;以及一保护结构,形成于该导电柱的该侧面与该第二凸块底金属层的该侧面之上;其中该保护结构由一聚合物层所形成,而该导电柱由一含铜层所形成,其中所述聚合物层具有数十微米的一厚度。本发明可调整基板的应力,避免了于回焊工艺中沿着凸块底金属层的周围的铜柱的焊锡湿润情形,因此适用于精细间距凸块技术。
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公开(公告)号:CN105047629A
公开(公告)日:2015-11-11
申请号:CN201510390848.4
申请日:2011-03-21
Applicant: 精材科技股份有限公司
IPC: H01L23/48 , H01L21/60 , H01L27/146
CPC classification number: H01L27/14636 , H01L23/3121 , H01L23/481 , H01L23/552 , H01L23/562 , H01L24/02 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/92 , H01L24/93 , H01L24/94 , H01L27/14618 , H01L27/14632 , H01L27/14687 , H01L2224/02313 , H01L2224/02331 , H01L2224/02371 , H01L2224/0239 , H01L2224/024 , H01L2224/0401 , H01L2224/11334 , H01L2224/13022 , H01L2224/13024 , H01L2224/29011 , H01L2224/29082 , H01L2224/2919 , H01L2224/32225 , H01L2224/83 , H01L2224/92 , H01L2224/9202 , H01L2224/93 , H01L2224/94 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01057 , H01L2924/01075 , H01L2924/01079 , H01L2924/014 , H01L2224/11 , H01L2224/0231 , H01L2924/3512 , H01L2924/00
Abstract: 本发明公开一种影像感测元件封装构件及其制作方法,该影像感测元件封装构件,其包含有:一影像感测晶粒,其具有一主动面以及相对于该主动面的一背面,且在该主动面上设有一影像感测元件区域以及一外接垫;一直通硅晶穿孔结构,贯穿该影像感测晶粒,连接该外接垫;多层重布线路,形成在该像感测晶粒的该背面上;以及一防焊层,覆盖在该多层重布线路上。
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公开(公告)号:CN104845546A
公开(公告)日:2015-08-19
申请号:CN201510166778.4
申请日:2010-12-24
Applicant: 日东电工株式会社
IPC: C09J7/02 , H01L21/77 , H01L21/68 , H01L21/50 , H01L23/488
CPC classification number: H01L21/6836 , H01L21/67132 , H01L23/562 , H01L24/16 , H01L24/81 , H01L2221/68377 , H01L2224/81201 , H01L2224/81801 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/3025 , Y10T428/28 , Y10T428/2848 , H01L2924/00
Abstract: 本发明涉及半导体背面用切割带集成膜。本发明提供一种半导体背面用切割带集成膜,其包括:包括基材和设置于所述基材上的压敏粘合剂层的切割带;和设置于所述压敏粘合剂层上的倒装芯片型半导体背面用膜,其中所述倒装芯片型半导体背面用膜包含黑色颜料。
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公开(公告)号:CN104845545A
公开(公告)日:2015-08-19
申请号:CN201510166579.3
申请日:2010-12-24
Applicant: 日东电工株式会社
IPC: C09J7/02 , H01L21/77 , H01L21/68 , H01L21/50 , H01L23/488
CPC classification number: H01L21/6836 , H01L21/67132 , H01L23/562 , H01L24/16 , H01L24/81 , H01L2221/68377 , H01L2224/81201 , H01L2224/81801 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/3025 , Y10T428/28 , Y10T428/2848 , H01L2924/00
Abstract: 本发明涉及半导体背面用切割带集成膜。本发明提供一种半导体背面用切割带集成膜,其包括:包括基材和设置于所述基材上的压敏粘合剂层的切割带;和设置于所述压敏粘合剂层上的倒装芯片型半导体背面用膜,其中所述倒装芯片型半导体背面用膜包含黑色颜料。
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公开(公告)号:CN104752235A
公开(公告)日:2015-07-01
申请号:CN201510133949.3
申请日:2015-03-26
Applicant: 鹰潭瑞兴铜业有限公司
Inventor: 陈晓东
CPC classification number: H01L2224/43 , H01L2224/45 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45639 , H01L24/42 , C22C1/02 , C22C9/00 , C22F1/08 , H01L24/43 , H01L24/44 , H01L2224/4321 , H01L2224/43848 , H01L2924/01046 , H01L2924/013 , H01L2924/01047 , H01L2924/00013 , H01L2924/01075 , H01L2924/01105 , H01L2924/00012 , H01L2924/01204 , H01L2924/00015 , H01L2924/01205
Abstract: 本发明提供一种铜钯银合金高精超细键合引线制造方法,该键合引线是由下列重量百分比的原料组成:银4%,钯0.03%,混合型稀土0.0002%,其余为铜,其制造方法包括:制备铜合金铸锭,连铸成铸态单晶母线,粗拔,热处理,表面镀银,精拔,热处理,表面清洗,本发明可以有效提升键合引线的抗氧化性能,有利于进一步缩小键合引线的线径,缩短焊接间距,更加适用于高密度,多引脚集成电路封装。
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公开(公告)号:CN102709202B
公开(公告)日:2015-07-01
申请号:CN201210082855.4
申请日:2012-03-26
Applicant: 美国博通公司
IPC: H01L21/60 , H01L21/56 , H01L23/488 , H01L23/31
CPC classification number: H01L24/81 , H01L21/561 , H01L21/568 , H01L23/3128 , H01L24/97 , H01L2224/13 , H01L2224/13082 , H01L2224/131 , H01L2224/13144 , H01L2224/13147 , H01L2224/1319 , H01L2224/136 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/81005 , H01L2224/81191 , H01L2224/81193 , H01L2224/81815 , H01L2224/83192 , H01L2224/97 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/09701 , H01L2924/10329 , H01L2924/12042 , H01L2924/15311 , H01L2924/181 , H01L2224/81 , H01L2924/00014 , H01L2924/00
Abstract: 本发明涉及一种集成电路(IC)封装及其组装方法。形成包括多个基板的基板面板。分割所述基板面板,以分离成所述多个基板。将所分离的基板的至少子集连接在载体的表面。将一个或多个晶片连接装在所述载体上的每一个所述基板。在所述载体上使用模塑料对所述晶片和所述基板进行封装。从所封装的晶片和基板中拆卸所述载体,以形成模塑组装,所述模塑组装包括用于封装所述晶片和基板的所述模塑料。将多个互连连接在所述模塑组装的表面上的每一个所述基板。分割所述模塑组装,以形成多个IC封装。每一个IC封装包括至少一个所述晶片和基板。
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