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公开(公告)号：KR1020070098643A
公开(公告)日：2007-10-05
申请号：KR1020070030756
申请日：2007-03-29
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01J37/32174 , H01J37/32091 , H01J37/32165
Abstract: A plasma processing apparatus and a plasma processing method are provided to improve uniformity of a process by arbitrarily controlling a spatial distribution characteristic of the plasma density while completely preventing formation of an undesired film on an opposed electrode. A plasma processing apparatus includes a capacitively coupled(parallel plate type) plasma etching device using a lower dual frequency superimposed application method. A substrate(W) is mounted on a susceptor(16). A primary high frequency for generating plasma is applied to the susceptor(16) from a high-frequency power source(30) and a secondary high-frequency for injecting ion is applied to the susceptor(16) from a high-frequency power source(70). An upper electrode(34) is attached to a chamber(10) via a ring-shaped insulator(35). The upper electrode(34) is connected to a ground potential via an inductor(54) and a conducting wire(56).
Abstract translation: 提供等离子体处理装置和等离子体处理方法，以通过任意地控制等离子体密度的空间分布特性来改善工艺的均匀性，同时完全防止在相对电极上形成不期望的膜。 等离子体处理装置包括使用较低双重叠加应用方法的电容耦合（平行板型）等离子体蚀刻装置。 衬底（W）安装在基座（16）上。 用于产生等离子体的初级高频从高频电源（30）施加到基座（16），并且用于注入离子的次级高频从高频电源施加到基座（16） 70）。 上电极（34）通过环形绝缘体（35）附接到室（10）。 上电极（34）经由电感器（54）和导线（56）连接到接地电位。
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公开(公告)号：KR1020070098587A
公开(公告)日：2007-10-05
申请号：KR1020070030130
申请日：2007-03-28
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065
CPC classification number: H01J37/32091 , H01J37/32174 , H01J37/32532
Abstract: An apparatus for processing plasma and a method for processing the plasma are provided to improve the uniformity inside a surface of a process by voluntarily controlling the spatial distribution of plasma density. An apparatus for processing plasma includes a processing container(10), a first electrode, a second electrode, a processing gas supplying unit, and a first high frequency feeding power unit. The processing container(10) forms a vacuum by being exhausted. The first electrode is attached in a state of electrically floating through an insulator and a space inside the processing container(10). The second electrode supports a substrate to be processed by being opposite to the first electrode. The processing gas supplying unit supplies processing gas to a processing space between the first electrode and a side wall of the second electrode and the processing container(10). The first high frequency feeding power unit applies a first high frequency to the second electrode to generate the plasma of the processing gas on the processing space.
Abstract translation: 提供了一种用于处理等离子体的设备和用于处理等离子体的方法，以通过主动地控制等离子体密度的空间分布来改善工艺表面内部的均匀性。 一种用于处理等离子体的设备包括处理容器（10），第一电极，第二电极，处理气体供应单元和第一高频馈电功率单元。 处理容器（10）通过排出而形成真空。 第一电极通过绝缘体和处理容器（10）内部的空间电浮动的状态附接。 第二电极通过与第一电极相对的方式支撑要处理的衬底。 处理气体供给单元将处理气体供给到第一电极和第二电极的侧壁与处理容器（10）的处理空间。 第一高频馈电功率单元向第二电极施加第一高频以在处理空间上产生处理气体的等离子体。
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公开(公告)号：KR1020070096864A
公开(公告)日：2007-10-02
申请号：KR1020070028146
申请日：2007-03-22
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065
CPC classification number: H01J37/32082 , H01J37/32532 , H01J37/32834
Abstract: A plasma processing apparatus and method and a storage medium are provided to prevent plasma from being leaked into an exhaust space by interrupting inflow of electrons into the exhaust space. A substrate processing chamber(11) has a processing space(PS) for a plasma process, an exhaust space(ES) exhausting a gas out of the processing space, and an exhaust flow path(16) communicating the exhaust space and the processing space. A ground component(16) is disposed in the exhaust flow path, and has a conduction portion(45) made of a conductive material. The conduction portion has an area exposed to the exhaust flow path in the range of 100 to 1000 cm^2.
Abstract translation: 提供等离子体处理装置和方法以及存储介质，以通过中断电子流入排气空间来防止等离子体泄漏到排气空间中。 基板处理室（11）具有用于等离子体处理的处理空间（PS），从处理空间排出气体的排气空间（ES）以及将排气空间与处理空间连通的排气流路 。 接地部件（16）设置在排气流路中，并且具有由导电材料制成的导电部（45）。 导电部分具有在100至1000cm 2的范围内暴露于排气流路的区域。
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公开(公告)号：KR1020070020142A
公开(公告)日：2007-02-16
申请号：KR1020077001688
申请日：2005-06-21
Applicant: 도쿄엘렉트론가부시키가이샤
Inventor： 고시이시아키라 , 스기모토마사루 , 히나타구니히코 , 고바야시노리유키 , 고시미즈치시오 , 오타니류지 , 기비가즈오 , 사이토마사시 , 마츠모토나오키 , 오오야요시노부 , 이와타마나부 , 야노다이스케 , 야마자와요헤이 , 하나오카히데토시 , 하야미도시히로 , 야마자키히로키 , 사토마나부
IPC: H05H1/18
CPC classification number: H01L21/31116 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J2237/3342 , H01L21/31138
Abstract: There is provided a plasma etching device for generating plasma as a processing gas between an upper electrode (34) and a lower electrode (16) and subjecting a wafer (W) to plasma etching. The upper electrode (34) includes a variable DC power source (50) for applying DC voltage so that the absolute value of the self bias voltage Vdc on the surface of the upper electrode (34) becomes large enough to obtain an appropriate sputter effect to the surface and the thickness of the plasma sheath on the upper electrode (34) becomes thick enough to form a desired miniaturization plasma. ® KIPO & WIPO 2007
Abstract translation: 提供了一种用于在上电极（34）和下电极（16）之间产生等离子体作为处理气体并对晶片（W）进行等离子体蚀刻的等离子体蚀刻装置。 上电极（34）包括用于施加直流电压的可变直流电源（50），使得上电极（34）的表面上的自偏压Vdc的绝对值变得足够大以获得适当的溅射效应 上电极（34）上的等离子体护套的表面和厚度变得足够厚以形成期望的小型化等离子体。 ®KIPO＆WIPO 2007
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公开(公告)号：KR1020060105675A
公开(公告)日：2006-10-11
申请号：KR1020060029766
申请日：2006-03-31
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065
CPC classification number: H01J37/32091 , H01J37/32082 , H01J37/32174
Abstract: 본 발명의 목적은 고주파 전력 외에 직류 전압을 인가하는 용량 결합형의 플라즈마 처리 장치를 전제로 하여, 양호한 플라즈마를 얻을 수 있는 플라즈마 처리 장치 및 플라즈마 처리 방법을 제공하는 것이다.
본 발명은, 챔버(10)내에 대향하여 배치되는 상부 전극(34) 및 하부 전극(16) 사이에 처리 가스의 플라즈마를 형성하여 웨이퍼 W에 플라즈마 에칭을 실시하는 플라즈마 에칭 장치로서, 상부 전극(34)에 고주파 전력을 공급하여 플라즈마를 형성하기 위한 고주파 전원(48)과, 상부 전극(34)에 직류 전압을 인가하는 가변 직류 전원(50)과, 고주파 전원(48) 및 가변 직류 전원(50)을 제어하는 제어부(95)를 구비하되, 제어부(95)는 고주파 전원(48)으로부터의 급전을 개시한 시점 또는 그 이후에, 가변 직류 전원(50)으로부터의 인가 전압이 설정값으로 되도록 제어한다.-
Patent Agency Ranking
公开(公告)号：KR1020040093017A
公开(公告)日：2004-11-04
申请号：KR1020040028211
申请日：2004-04-23
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/66
CPC classification number: G01N21/68 , H01J37/32174 , H01J37/32935 , H01J37/32972 , H01L21/31116
Abstract: PURPOSE: A plasma monitoring method and apparatus and a plasma processing apparatus are provided to measure precisely electron density of plasma even under a low electron density or a high pressure condition by using a network analyzer. CONSTITUTION: An antenna probe(52a) is placed at a desired monitoring position inside or near to plasma of a predetermined space. Frequency-variable electromagnetic waves are radiated from the antenna probe to the plasma. The antenna probe receives the electromagnetic waves reflected from the plasma. By measuring a complex reflection coefficient based on the incident and reflected electromagnetic waves using a network analyzer(68), an imaginary part is obtained from the complex reflection coefficient. A resonant frequency capable of nullifying the value of the imaginary part is measured by sweeping frequencies of the electromagnetic waves. The electron density of plasma is calculated based on the measured resonant frequency.
Abstract translation: 目的：提供等离子体监测方法和装置以及等离子体处理装置，通过使用网络分析仪，即使在低电子密度或高压条件下也能精确地测量等离子体的电子密度。 构成：将天线探针（52a）放置在预定空间的等离子体内或附近的期望的监视位置。 可变频电磁波从天线探针辐射到等离子体。 天线探头接收从等离子体反射的电磁波。 通过使用网络分析器（68）测量基于入射和反射电磁波的复反射系数，从复反射系数获得虚部。 可以通过扫描电磁波的频率来测量能够使虚部的值无效的谐振频率。 基于测量的谐振频率计算等离子体的电子密度。
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公开(公告)号：KR1020040010220A
公开(公告)日：2004-01-31
申请号：KR1020030048603
申请日：2003-07-16
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H05H1/46
CPC classification number: H01J37/321
Abstract: PURPOSE: To provide a plasma processing apparatus that can highly efficiently generate high-density plasma, even when the device processes an object to be processed has a large area. CONSTITUTION: In this plasma processing apparatus, which generates plasma by supplying high-frequency power into a processing chamber and processes the object based on the plasma, a high-frequency antenna is arranged on the inside and on the outside of the processing chamber so as to surround the top board of the processing chamber. The top board can be constituted of a metal- or silicon-based material.
Abstract translation: 目的：为了提供能够高效率地生成高密度等离子体的等离子体处理装置，即使设备处理对象物的面积大。 构成：在该等离子体处理装置中，通过向处理室内供给高频电力并基于等离子体进行处理而产生等离子体，高频天线设置在处理室的内部和外部，以便 以围绕处理室的顶板。 顶板可以由金属或硅基材料构成。
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公开(公告)号：KR102102003B1
公开(公告)日：2020-04-20
申请号：KR1020147029747
申请日：2013-05-21
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H01L21/02 , H01L21/677
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公开(公告)号：KR101910678B1
公开(公告)日：2018-10-22
申请号：KR1020137012435
申请日：2011-11-16
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/3065
CPC classification number: H05H1/46 , H01J37/32192 , H01J37/32211 , H01J37/3244
Abstract: 본발명의플라즈마처리장치는, 기판을탑재하기위한탑재대가마련되는처리용기, 상기처리용기내로제1 가스를공급하도록구성되는제1 가스공급유닛, 상기제1 가스의적어도일부를제1 플라즈마로변환하도록구성되는제1 플라즈마생성유닛, 상기처리용기내로제2 가스를공급하도록구성되는제2 가스공급유닛, 및상기제2 가스의적어도일부를제2 플라즈마로변환하도록구성되는제2 플라즈마생성유닛을포함한다. 탑재대로부터제2 가스의유입구의높이는, 탑재대로부터제1 가스의유입구의높이보다낮다.
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公开(公告)号：KR1020160051603A
公开(公告)日：2016-05-11
申请号：KR1020150142675
申请日：2015-10-13
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: H01J37/32192 , H01J37/3222 , H01J37/32238 , H01J37/32449 , H01J37/32495
Abstract: (과제) 플라즈마처리장치내에있어서, 처리용기의내면을보호하면서, 플라즈마가안정하게발생되는것이가능한플라즈마처리장치를제공한다. (해결수단) 이플라즈마처리장치는, 처리용기(1)와, 처리용기(1) 내에배치된테이블(3)과, 처리용기(1)에설치된유전체창(16)과, 유전체창(16) 위에설치된슬롯판(20)과, 테이블(3)과유전체창(16)의사이의처리공간을둘러싸는유전체로이루어지는포위체 Q를구비하되, 슬롯판(20)에마이크로파를입력함으로써, 유전체창(16) 아래에플라즈마를발생시켜, 이플라즈마에의해, 테이블(3) 위에배치된기판(W)에처리를행하는것이며, 포위체 Q와볼록부(16p)의사이에소정의제 1 간극 G1가존재한다.
Abstract translation: 本发明的目的是提供一种能够在保护处理室的内表面的同时稳定地产生等离子体处理装置。 等离子体处理装置包括处理室（1），设置在处理室（1）中的工作台（3），安装在处理室（1）的电介质窗口（16），安装在处理室 电介质窗口（16）以及围绕桌子（3）和电介质窗口（16）之间的处理空间的环绕体Q。 这种等离子体处理装置通过将微波输入到槽板（20）中并通过产生的等离子体处理安装在工作台（3）上的衬底（W）来在电介质窗口16之下产生等离子体。 在周围物体Q与突起（16p）之间存在规定的第一间隙G1。
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