Abstract:
A lithographic apparatus includes an illumination system configured to condition a radiation beam; a polarization sensor configured at least in part to couple to a reticle stage, wherein components of the reticle polarization sensor can be loaded and unloaded in the lithographic apparatus in the manner used for conventional reticles. In one configuration an active reticle tool includes a rotatable retarder configured to vary the retardation applied to polarized light received from a field point in the illumination system. In another configuration, a passive reticle tool is configured as an array of polarization sensor modules, where the amount of retardation applied to received light by fixed retarders varies according to position of the polarization sensor module. Accordingly, a plurality of retardation conditions for light received at a given field point can be measured, wherein a complete determination of a polarization state of the light at the given field point can be determined. In another configuration, the polarization sensor is configured to measure the effect of a projection lens on a polarization state of light passing through the projection lens.
Abstract:
A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.
Abstract:
An analyser plate (AP) between a projection system (PL) and a radiation sensor (DS) is illuminated by a beam of projection radiation. The analyser plate contains 2 crossing regions, each of which transmits radiation with a different polarisation direction. The beam of projection radiation is patterned without influencing the polarisation of the beam. By patterning the beam of projection radiation so that one region receives more radiation than the other region, the radiation sensor (DS) is given polarisation selectivity.
Abstract:
A sensor (30) for use at substrate level in a high-NA lithographic apparatus has a transparent plate (22) covering a sensing element (25) and arrangements to improve coupling of radiation into the sensing element, including Fresnel lenses (31), holographic optical elements, inverted Winston Cones, spherical lenses and surface roughening.
Abstract:
A lithographic projection apparatus is disclosed in which the space between the final element of the projection system and a sensor is filled with a liquid.
Abstract:
A sensor (30) for use at substrate level in a high-NA lithographic apparatus has a transparent plate (22) covering a sensing element (25) and arrangements to improve coupling of radiation into the sensing element, including Fresnel lenses (31), holographic optical elements, inverted Winston Cones, spherical lenses and surface roughening.
Abstract:
A pellicle membrane for a lithographic apparatus, said membrane comprising uncapped carbon nanotubes is provided. Also provided is a method of regenerating a pellicle membrane, said method comprising decomposing a precursor compound and depositing at least some of the products of decomposition onto the pellicle membrane. Also described is a method of reducing the etch rate of a pellicle membrane, said method comprising providing an electric field in the region of the pellicle membrane to redirect ions from the pellicle, or heating elements to desorb radicals from the pellicle, preferably wherein the pellicle membrane is a carbon nanotube pellicle membrane as well as an assembly for a lithographic apparatus, said assembly including a biased electrode near or including the pellicle membrane or heating means for pellicle membrane.
Abstract:
Membranes for EUV lithography are disclosed. In one arrangement, a membrane comprises a stack having layers in the following order: a first capping layer comprising an oxide of a first metal; a base layer comprising a compound comprising a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer comprising an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
Abstract:
A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and comprising a stack comprising: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine