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公开(公告)号:CN103247589B
公开(公告)日:2017-10-20
申请号:CN201310049396.4
申请日:2013-02-07
Applicant: 三星电子株式会社
IPC: H01L23/488 , H01L21/60 , H01L25/065
CPC classification number: H01L24/85 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/78 , H01L25/0657 , H01L2224/04042 , H01L2224/05624 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/4809 , H01L2224/48145 , H01L2224/48147 , H01L2224/48227 , H01L2224/48465 , H01L2224/48599 , H01L2224/48616 , H01L2224/48624 , H01L2224/48992 , H01L2224/48997 , H01L2224/73265 , H01L2224/78301 , H01L2224/85181 , H01L2224/85365 , H01L2224/85416 , H01L2224/85951 , H01L2224/85986 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2924/00014 , H01L2924/00012 , H01L2924/00 , H01L2224/48455
Abstract: 本发明提供一种半导体封装件和制造半导体封装件的方法。该半导体封装件包括:包括板焊盘的板;安装在板上的多个半导体芯片,半导体芯片包括芯片焊盘。突起分别设置在芯片焊盘上,引线设置在芯片焊盘和突起之间。引线将多个半导体芯片的芯片焊盘和板焊盘彼此电连接。
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公开(公告)号:CN102903694B
公开(公告)日:2017-09-08
申请号:CN201210263016.2
申请日:2012-07-26
Applicant: 英飞凌科技股份有限公司
IPC: H01L23/495 , H01L21/60 , H01L29/40
CPC classification number: H01L24/73 , H01L23/3107 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/97 , H01L2224/02166 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/05147 , H01L2224/05155 , H01L2224/05553 , H01L2224/05567 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/0603 , H01L2224/2732 , H01L2224/2745 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/2929 , H01L2224/29291 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/32014 , H01L2224/32145 , H01L2224/32245 , H01L2224/33181 , H01L2224/37147 , H01L2224/3716 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/48599 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/4866 , H01L2224/48664 , H01L2224/48666 , H01L2224/48669 , H01L2224/48671 , H01L2224/48699 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/4876 , H01L2224/48764 , H01L2224/48766 , H01L2224/48769 , H01L2224/48771 , H01L2224/48799 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/4886 , H01L2224/48864 , H01L2224/48866 , H01L2224/48869 , H01L2224/48871 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83191 , H01L2224/83801 , H01L2224/8381 , H01L2224/8382 , H01L2224/85439 , H01L2224/85447 , H01L2224/85455 , H01L2224/8546 , H01L2224/92246 , H01L2224/92247 , H01L2224/94 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01047 , H01L2924/01327 , H01L2924/014 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/181 , H01L2924/30107 , H01L2924/01028 , H01L2224/27 , H01L2924/0105 , H01L2924/01049 , H01L2924/01014 , H01L2924/00012 , H01L2924/01023 , H01L2224/85 , H01L2224/83 , H01L2224/84 , H01L2924/00 , H01L2224/05552 , H01L2924/01005
Abstract: 本发明涉及在一个面上具有两层金属层的功率半导体芯片。该半导体芯片包括具有多个有源晶体管元件的功率晶体管电路。第一负载电极和控制电极布置在半导体芯片的第一面上,其中,第一负载电极包括第一金属层。第二负载电极布置在半导体芯片的第二面上。第二金属层布置在第一金属层上方,其中第二金属层与功率晶体管电路电绝缘,第二金属层布置在功率晶体管电路的包括多个有源晶体管元件中的至少一个的区域的上方。
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公开(公告)号:CN102884622B
公开(公告)日:2016-08-03
申请号:CN201180024013.7
申请日:2011-05-13
Applicant: 大陆汽车系统公司
Inventor: J-H.A.仇
CPC classification number: H01L24/48 , G01L19/0069 , G01L19/148 , H01L24/45 , H01L24/49 , H01L2224/05553 , H01L2224/05554 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48011 , H01L2224/4809 , H01L2224/48091 , H01L2224/48472 , H01L2224/48599 , H01L2224/4911 , H01L2224/49112 , H01L2224/49113 , H01L2224/49171 , H01L2224/49175 , H01L2224/85444 , H01L2224/8592 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01079 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/19105 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/00014 , H01L2924/20652 , H01L2924/20653 , H01L2924/00 , H01L2924/20751 , H01L2924/00015 , H01L2924/2075
Abstract: 被接合在不同高度处的两个接合焊盘上的线的任何两个段都可以在其第二模式振动期间通过静止的节点(或零位移)被区别。为了提升这样的接合线的固有频率以避免在面内振动中以最低的频率发生的第二模式谐振,通过连接两个被均衡的(最短可能的)线段以替换由较大的段和较短的段组成的线,线可以被优化。目的是将任意接合线的具有较低刚度的较长段中的较大振动移动再分配为被优化的线的两个较小的被均衡的段,以减少面内振动,以显著改进线的固有频率和在诸如在30KHz以上之类的苛刻的振动环境中的可靠性。
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公开(公告)号:CN103069557B
公开(公告)日:2015-12-02
申请号:CN201180039551.3
申请日:2011-08-03
Applicant: 库力索法工业公司
Inventor: 加里·S·吉洛蒂
IPC: H01L21/60
CPC classification number: H01R43/00 , B23K20/005 , B23K20/007 , H01L24/45 , H01L24/48 , H01L24/78 , H01L24/85 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45664 , H01L2224/48095 , H01L2224/48247 , H01L2224/48471 , H01L2224/48478 , H01L2224/48479 , H01L2224/48599 , H01L2224/48699 , H01L2224/78301 , H01L2224/82045 , H01L2224/829 , H01L2224/85045 , H01L2224/85051 , H01L2224/85186 , H01L2224/85203 , H01L2224/85205 , H01L2224/85986 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01079 , H01L2924/01082 , Y10T29/49117 , H01L2924/00 , H01L2224/48227 , H01L2224/85399 , H01L2224/05599
Abstract: 提供了形成引线环的方法。该方法包括:(1)使用引线焊接工具在焊接位置形成导电凸部;(2)使用所述引线焊接工具将引线的一部分焊接至另一焊接位置;(3)从引线的焊接部朝向所述焊接位置延伸一段引线;(4)朝向所述焊接位置降低所述引线焊接工具,同时检测所述引线焊接工具的尖端的高度;以及(5)如果所述引线焊接工具的尖端到达预定高度则中断步骤(4)中的所述引线焊接工具的降低。
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公开(公告)号:CN102376595B
公开(公告)日:2015-11-18
申请号:CN201110234097.9
申请日:2011-08-16
Applicant: 新科金朋有限公司
IPC: H01L21/56 , H01L21/60 , H01L21/768 , H01L23/31 , H01L23/498 , H01L23/538
CPC classification number: H01L23/5384 , H01L21/486 , H01L21/50 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L21/768 , H01L23/3107 , H01L23/3128 , H01L23/5389 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/25 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/82 , H01L24/97 , H01L25/105 , H01L2221/68345 , H01L2221/68359 , H01L2221/68363 , H01L2221/68381 , H01L2221/68386 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/06131 , H01L2224/1132 , H01L2224/11334 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/11849 , H01L2224/11901 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/21 , H01L2224/2105 , H01L2224/215 , H01L2224/22 , H01L2224/221 , H01L2224/24011 , H01L2224/2405 , H01L2224/24105 , H01L2224/24226 , H01L2224/245 , H01L2224/25171 , H01L2224/29144 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48105 , H01L2224/48175 , H01L2224/48227 , H01L2224/48228 , H01L2224/48599 , H01L2224/48611 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/73265 , H01L2224/73267 , H01L2224/82005 , H01L2224/92244 , H01L2224/95001 , H01L2224/97 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2924/01013 , H01L2924/01029 , H01L2924/01047 , H01L2924/01049 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H05K1/186 , H05K3/007 , H05K3/4602 , H05K3/4608 , H05K2201/0195 , H05K2201/10674 , H01L2924/00014 , H01L2924/01014 , H01L2924/0665 , H01L2924/0105 , H01L2224/82 , H01L2924/00012 , H01L2924/00 , H01L2224/83
Abstract: 本发明涉及形成具有导电层和导电通孔的FO-WLCSP的方法和半导体器件。Fo-WLCSP具有在半导体管芯周围形成的第一聚合物层。通过第一聚合物层的第一导电通孔在半导体管芯的周界周围形成。第一互连结构在第一聚合物层的第一表面上面形成且电连接到第一导电通孔。第一互连结构具有第二聚合物层和通过第二聚合物层形成的多个第二通孔。第二互连结构在第一聚合物层的第二表面上面形成且电连接到第一导电通孔。第二互连结构具有第三聚合物层和通过第三聚合物层形成的多个第三通孔。半导体封装可以以PoP布置安装到WLCSP。半导体封装通过第一互连结构或第二互连结构而电连接到WLCSP。
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公开(公告)号:CN102623440B
公开(公告)日:2015-05-20
申请号:CN201110460504.8
申请日:2011-12-31
Applicant: 富士通株式会社
Inventor: 赤松俊也
IPC: H01L25/00 , H01L25/065 , H01L23/48 , H01L23/498 , H01L21/60 , H01L21/50
CPC classification number: H01L25/0657 , H01L21/76898 , H01L23/481 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/48 , H01L24/73 , H01L24/81 , H01L25/0652 , H01L25/50 , H01L29/0657 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2224/05567 , H01L2224/05571 , H01L2224/05573 , H01L2224/05624 , H01L2224/11002 , H01L2224/1147 , H01L2224/13006 , H01L2224/13024 , H01L2224/13025 , H01L2224/13027 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/14181 , H01L2224/16141 , H01L2224/16147 , H01L2224/16148 , H01L2224/16238 , H01L2224/1624 , H01L2224/1703 , H01L2224/17051 , H01L2224/17181 , H01L2224/45144 , H01L2224/48095 , H01L2224/48227 , H01L2224/48599 , H01L2224/73204 , H01L2224/73207 , H01L2224/73265 , H01L2224/81136 , H01L2224/8114 , H01L2224/81192 , H01L2224/81193 , H01L2224/81815 , H01L2224/81986 , H01L2224/83102 , H01L2224/9201 , H01L2224/94 , H01L2224/96 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2225/06555 , H01L2225/06572 , H01L2225/06575 , H01L2924/00013 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/15159 , H01L2924/15321 , H01L2924/15787 , H01L2924/1579 , H01L2924/351 , H05K1/18 , H05K1/181 , H05K2201/09063 , H05K2201/1053 , H05K2201/10545 , H05K2201/10674 , H01L2224/13099 , H01L2224/11 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2224/81 , H01L2924/00012 , H01L2224/48624 , H01L2924/00 , H01L2224/05552 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 公开了一种半导体装置、制造半导体装置的方法和电子装置。该半导体装置包括半导体元件和电子元件。半导体元件具有第一突出电极,并且电子元件具有第二突出电极。基底被布置在半导体元件与电子元件之间。基底具有通孔,第一和第二突出电极配合在通孔中。第一和第二突出电极在基底的通孔内连接到一起。基底具有绝缘膜,绝缘膜覆盖第一通孔的侧壁并且暴露在第一通孔内,并且第一突出电极的直径和第二突出电极的直径小于第一通孔的直径。
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公开(公告)号:CN102339802B
公开(公告)日:2015-05-13
申请号:CN201110317683.X
申请日:2009-07-21
Applicant: 三菱电机株式会社
IPC: H01L23/482
CPC classification number: H01L24/06 , H01L24/05 , H01L2224/04042 , H01L2224/05552 , H01L2224/05553 , H01L2224/0603 , H01L2224/06051 , H01L2224/45 , H01L2224/45144 , H01L2224/48 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/48599 , H01L2224/49 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01019 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/13064 , H01L2924/16195 , H01L2924/181 , H01L2924/00 , H01L2224/05556 , H01L2924/00012
Abstract: 本发明的目的在于提供一种高频半导体装置,其能够延长栅极金属线和漏极金属线的金属线长度。该高频半导体装置具备:封装件,其具有空腔;半导体芯片,其配置在该空腔底面,在上表面具有栅极电极、源极电极、以及漏极电极;栅极框,配置在该空腔底面;漏极框,配置在该空腔底面;源极框,配置在该空腔底面;栅极金属线,连接该栅极电极和该栅极框;漏极金属线,连接该漏极电极和该漏极框;以及源极金属线,连接该源极电极和该源极框。而且,该高频半导体装置的特征在于,该半导体芯片,以与将该半导体芯片配置在该空腔底面的中央部的情况相比使该栅极金属线和该漏极金属线的长度变长的方式,从该中央部离开规定的偏移而配置。
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公开(公告)号:CN102379036B
公开(公告)日:2015-04-08
申请号:CN200980158496.2
申请日:2009-04-30
Applicant: 瑞萨电子株式会社
IPC: H01L21/768 , H01L21/314 , H01L23/522
CPC classification number: H01L23/49503 , H01L21/76801 , H01L21/76807 , H01L21/76811 , H01L21/76832 , H01L23/3128 , H01L23/3192 , H01L23/5329 , H01L23/53295 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/16 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/97 , H01L2224/02126 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/1147 , H01L2224/13022 , H01L2224/13099 , H01L2224/16225 , H01L2224/32014 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/73204 , H01L2224/73253 , H01L2224/92 , H01L2224/92247 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01052 , H01L2924/01057 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/12041 , H01L2924/1306 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/16195 , H01L2924/181 , H01L2924/30105 , H01L2224/81 , H01L2224/83 , H01L2224/85 , H01L2924/00 , H01L2224/05556 , H01L2924/3512 , H01L2924/00012 , H01L2924/01004
Abstract: 本申请发明的目的在于提供一种提高半导体器件可靠性的技术,即使在层间绝缘膜的一部分中使用介电常数低于氧化硅膜的低介电常数膜的情况下,也能够提高半导体器件可靠性。具体而言,为了实现所述目的,由中杨氏模量膜形成构成第1精细层的层间绝缘膜IL1,因此能够使一体化的高杨氏模量层(半导体基板1S与接触层间绝缘膜CIL)与构成第2精细层的层间绝缘膜(低杨氏模量膜、低介电常数膜)IL2不直接接触地分离,能够分散应力。结果能够防止由低杨氏模量膜构成的层间绝缘膜IL2的膜剥离,能够提高半导体器件的可靠性。
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公开(公告)号:CN103384913A
公开(公告)日:2013-11-06
申请号:CN201180067768.5
申请日:2011-10-21
Applicant: 泰塞拉公司
Inventor: 贝尔加桑·哈巴 , 韦勒·佐尼 , 理查德·德威特·克里斯普
IPC: H01L25/065 , H01L23/50
CPC classification number: H05K1/11 , H01L23/13 , H01L23/3128 , H01L23/49816 , H01L23/50 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0657 , H01L2224/06136 , H01L2224/32145 , H01L2224/32225 , H01L2224/45014 , H01L2224/45144 , H01L2224/48095 , H01L2224/48227 , H01L2224/4824 , H01L2224/48465 , H01L2224/48599 , H01L2224/49111 , H01L2224/49175 , H01L2224/49427 , H01L2224/73215 , H01L2225/0651 , H01L2225/06562 , H01L2225/06575 , H01L2924/00014 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/1205 , H01L2924/1206 , H01L2924/1207 , H01L2924/1434 , H01L2924/15151 , H01L2924/15311 , H01L2924/181 , H01L2924/19103 , H01L2924/19107 , H01L2924/30107 , H05K1/115 , H05K1/181 , H05K2201/10507 , H05K2201/10628 , H01L2924/00 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
Abstract: 一种微电子组件700,包括:介电元件730,介电元件730具有至少一个孔733和在其上的导电元件,导电元件包括暴露在介电元件730的第二表面处的端子740;第一微电子元件712,第一微电子元件712具有后表面和面对介电元件730的前表面,第一微电子元件712具有暴露在其前表面处的多个触点;第二微电子元件714,第二微电子元件714具有后表面和面对第一微电子元件712的后表面的前表面,第二微电子元件714具有暴露在该前表面处且突出于第一微电子元件712的边缘之外的多个触点;以及导电平面790,导电平面790附接到介电元件730且至少部分地定位在第一孔733与第二孔739之间,导电平面790与至少一个第一微电子元件712或第二微电子元件714的一个或多个触点电连接。
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公开(公告)号:CN102005434B
公开(公告)日:2013-10-16
申请号:CN201010269038.0
申请日:2010-08-30
Applicant: 揖斐电株式会社
IPC: H01L23/498 , H01L21/48 , H05K1/11
CPC classification number: H05K3/42 , H01L21/6835 , H01L23/49816 , H01L23/49827 , H01L23/49866 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L2221/68345 , H01L2224/32057 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/48235 , H01L2224/484 , H01L2224/48599 , H01L2224/48644 , H01L2224/73265 , H01L2224/83385 , H01L2224/85001 , H01L2224/85385 , H01L2224/85444 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/12041 , H01L2924/12042 , H01L2924/15311 , H01L2924/181 , H01L2924/3025 , H05K1/0313 , H05K1/113 , H05K1/115 , H05K3/007 , H05K3/108 , H05K3/22 , H05K3/388 , H05K2201/0344 , H05K2201/09509 , H05K2201/09527 , H05K2201/09563 , H05K2203/072 , H05K2203/1377 , Y10T29/49155 , Y10T29/49156 , Y10T29/49165 , H01L2924/00012 , H01L2924/00011 , H01L2924/00 , H01L2224/05599
Abstract: 本发明涉及印刷线路板及其制造方法。该印刷线路板包括:层间树脂绝缘层,其具有通路导体用的贯通孔;导电电路,其形成在所述层间树脂绝缘层的一个表面上;通路导体,其形成于所述贯通孔中,并且具有相对于所述层间树脂绝缘层的另一表面而突出的突出部;以及表面处理涂布物,其形成在所述通路导体的所述突出部的表面上。该通路导体连接至导电电路,并且具有形成在贯通孔的侧壁上的第一导电层以及填充该贯通孔的镀层。
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